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M58LR128HT 数据表(PDF) 54 Page - STMicroelectronics |
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M58LR128HT 数据表(HTML) 54 Page - STMicroelectronics |
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54 / 112 page  Program and erase times and endurance cycles M58LR128HT, M58LR128HB 54/112 Erase Parameter Block (16 KWord) 0.4 2.5 s Main Block (64 KWord) 1 4 s Program(3) Single Word Word Program 10 170 µs Buffer Enhanced Factory Program(4) 2.5 µs Buffer (32 Words) Buffer Program 80 µs Buffer Enhanced Factory Program 80 µs Main Block (64 KWords) Buffer Program 160 ms Buffer Enhanced Factory Program 160 ms Bank (8 Mbits) Buffer Program 1.28 s Buffer Enhanced Factory Program 1.28 s Program/Erase Cycles (per Block) Main Blocks 1000 cycles Parameter Blocks 2500 cycles Blank Check Main Blocks 16 ms Parameter Blocks 4 ms 1. TA = –25 to 85 °C; VDD = 1.7 V to 2 V; VDDQ = 1.7 V to 2 V. 2. Values are liable to change with the external system-level overhead (command sequence and Status Register polling execution). 3. Excludes the time needed to execute the command sequence. 4. This is an average value on the entire device. Table 17. Program/Erase times and endurance cycles(1) (2) (continued) Parameter Condition Min Typ Typical after 100kW/E Cycles Max Unit |
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