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M58LR128HT 数据表(PDF) 58 Page - STMicroelectronics

部件名 M58LR128HT
功能描述  128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories
PDF  112 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M58LR128HT 数据表(HTML) 58 Page - STMicroelectronics

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DC and AC parameters
M58LR128HT, M58LR128HB
58/112
Table 21.
DC characteristics - currents
Symbol
Parameter
Test condition
Typ
Max
Unit
ILI
Input Leakage Current
0V
≤V
IN ≤VDDQ
±1
µA
ILO
Output Leakage Current
0V
≤V
OUT ≤VDDQ
±1
µA
IDD1
Supply Current
Asynchronous Read (f = 5 MHz)
E = VIL, G = VIH
13
15
mA
Supply Current
Synchronous Read (f = 54 MHz)
4 Word
18
20
mA
8 Word
20
22
mA
16 Word
25
27
mA
Continuous
28
30
mA
IDD2
Supply Current (Reset)
RP = VSS ± 0.2 V
22
50
µA
IDD3
Supply Current (Standby)
E = VDD ± 0.2 V
K=VSS
22
50
µA
IDD4
Supply Current (Automatic
Standby)
E = VIL, G = VIH
22
50
µA
IDD5
(1)
1.
Sampled only, not 100% tested.
Supply Current (Program)
VPP = VPPH
820
mA
VPP = VDD
10
25
mA
Supply Current (Erase)
VPP = VPPH
820
mA
VPP = VDD
10
25
mA
IDD6
(1),(2)
2.
VDD Dual Operation current is the sum of read and program or erase currents.
Supply Current
(Dual Operations)
Program/Erase in one Bank,
Asynchronous Read in
another Bank
23
40
mA
Program/Erase in one Bank,
Synchronous Read
(Continuous f = 54 MHz) in
another Bank
38
55
mA
IDD7
(1)
Supply Current Program/ Erase
Suspended (Standby)
E = VDD ± 0.2 V
K=VSS
22
50
µA
IPP1
(1)
VPP Supply Current (Program)
VPP = VPPH
25
mA
VPP = VDD
0.2
5
µA
VPP Supply Current (Erase)
VPP = VPPH
25
mA
VPP = VDD
0.2
5
µA
IPP2
VPP Supply Current (Read)
VPP ≤VDD
0.2
5
µA
IPP3
(1)
VPP Supply Current (Standby)
VPP ≤VDD
0.2
5
µA



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