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M58LR128HT 数据表(PDF) 86 Page - STMicroelectronics

部件名 M58LR128HT
功能描述  128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories
PDF  112 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M58LR128HT 数据表(HTML) 86 Page - STMicroelectronics

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Common Flash Interface
M58LR128HT, M58LR128HB
86/112
Table 35.
Device geometry definition
Offset
Data
Description
Value
027h
0018h
Device Size = 2n in number of bytes
16 MBytes
028h
029h
0001h
0000h
Flash Device Interface Code description
x16
Async.
02Ah
02Bh
0006h
0000h
Maximum number of bytes in multi-byte program or page = 2n
64 Bytes
02Ch
0002h
Number of identical sized erase block regions within the
device
bit 7 to 0 = x = number of Erase Block Regions
2
02Dh
02Eh
007Eh
0000h
Erase Block Region 1 Information
Number of identical-size erase blocks = 007Eh+1
127
02Fh
030h
0000h
0002h
Erase Block Region 1 Information
Block size in Region 1 = 0200h * 256 Byte
128 KByte
031h
032h
0003h
0000h
Erase Block Region 2 Information
Number of identical-size erase blocks = 0003h+1
4
033h
034h
0080h
0000h
Erase Block Region 2 Information
Block size in Region 2 = 0080h * 256 Byte
32 KByte
035h
038h
Reserved Reserved for future erase block region information
NA
02Dh
02Eh
0003h
0000h
Erase Block Region 1 Information
Number of identical-size erase block = 0003h+1
4
02Fh
030h
0080h
0000h
Erase Block Region 1 Information
Block size in Region 1 = 0080h * 256 bytes
32 KBytes
031h
032h
007Eh
0000h
Erase Block Region 2 Information
Number of identical-size erase block = 007Eh+1
127
033h
034h
0000h
0002h
Erase Block Region 2 Information
Block size in Region 2 = 0200h * 256 bytes
128 KBytes
035h
038h
Reserved Reserved for future erase block region information
NA



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