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M58LR128HT 数据表(PDF) 85 Page - STMicroelectronics

部件名 M58LR128HT
功能描述  128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories
PDF  112 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M58LR128HT 数据表(HTML) 85 Page - STMicroelectronics

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M58LR128HT, M58LR128HB
Common Flash Interface
85/112
Table 34.
CFI query system interface information
Offset
Data
Description
Value
01Bh
0017h
VDD Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
1.7V
01Ch
0020h
VDD Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
2V
01Dh
0085h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
8.5V
01Eh
0095h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
9.5V
01Fh
0004h
Typical time-out per single byte/word program = 2n µs
16µs
020h
0009h
Typical time-out for Buffer Program = 2n µs
512µs
021h
000Ah
Typical time-out per individual block erase = 2n ms
1s
022h
0000h
Typical time-out for full chip erase = 2n ms
NA
023h
0004h
Maximum time-out for word program = 2n times typical
256µs
024h
0004h
Maximum time-out for Buffer Program = 2n times typical
8192µs
025h
0002h
Maximum time-out per individual block erase = 2n times typical
4s
026h
0000h
Maximum time-out for chip erase = 2n times typical
NA



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