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M58LR128HT 数据表(PDF) 38 Page - STMicroelectronics |
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M58LR128HT 数据表(HTML) 38 Page - STMicroelectronics |
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38 / 112 page ![]() Configuration Register M58LR128HT, M58LR128HB 38/112 6 Configuration Register The Configuration Register is used to configure the type of bus access that the memory will perform. Refer to Read Modes section for details on read operations. The Configuration Register is set through the Command Interface using the Set Configuration Register command. After a reset or power-up the device is configured for asynchronous read (CR15 = 1). The Configuration Register bits are described in Table 11 They specify the selection of the burst length, burst type, burst X latency and the read operation. Refer to Figures 5 and 6 for examples of synchronous burst configurations. 6.1 Read Select bit (CR15) The Read Select bit, CR15, is used to switch between Asynchronous and Synchronous Read operations. When the Read Select bit is set to ’1’, read operations are asynchronous; when the Read Select bit is set to ’0’, read operations are synchronous. Synchronous Burst Read is supported in both parameter and main blocks and can be performed across banks. On reset or power-up the Read Select bit is set to ’1’ for asynchronous access. 6.2 X-Latency bits (CR13-CR11) The X-Latency bits are used during Synchronous Read operations to set the number of clock cycles between the address being latched and the first data becoming available. Refer to Figure 5: X-Latency and data output configuration example. For correct operation the X-Latency bits can only assume the values in Table 11: Configuration Register. Table 10 shows how to set the X-Latency parameter, taking into account the speed class of the device and the Frequency used to read the Flash memory in Synchronous mode. Table 10. X-Latency settings fmax tKmin X-Latency min 30 MHz 33 ns 3 40 MHz 25 ns 4 54 MHz 19 ns 5 |
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