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ST72E331 数据表(PDF) 33 Page - STMicroelectronics |
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ST72E331 数据表(HTML) 33 Page - STMicroelectronics |
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33 / 107 page  33/107 ST72E331 ST72T331 5.2 EEPROM (EEP) 5.2.1 Introduction The Electrically Erasable Programmable Read Only Memory is used to store data that need a non volatile back-up. The use of the EEPROM requires a basic protocol described in this chapter. 5.2.2 Main Features s Up to 16 bytes programmed in the same cycle s EEPROM mono-voltage (charge pump) s Chained erase and programming cycles s Internal control of the global programming cycle duration s End of programming cycle interrupt flag s WAIT mode management Figure 22. EEPROM Block Diagram BUFFER ROW DECODER 16*8 BITS DATA LATCHES DATA MULTIPLEXER HIGH VOLTAGE PUMP EEPROM MEMORY MATRIX 1 ROW = 16 * 8 BITS ADDRESS DECODER ADDRESS BUS DATA BUS E2ITE E2LAT E2PGM EEPCR RESERVED . . . . . . 128 128 8 8 4 4 12 INTERRUPT REQUEST FALLING EDGE DETECTOR 33 |
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