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ST72E331 数据表(PDF) 35 Page - STMicroelectronics |
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ST72E331 数据表(HTML) 35 Page - STMicroelectronics |
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35 / 107 page ![]() 35/107 ST72E331 ST72T331 EEPROM (Cont’d) Figure 23. EEPROM Programming Cycle Figure 24. EEPROM Programming Flowchart Erase cycle Write cycle Tprog Read operation allowed Read operation not possible INTERNAL PROGRAMMING VOLTAGE Write of data latches E2LAT E2PGM INTERRUPT REQUEST Interrupt vector fetch E2LAT=1 E2PGM=0 (Write mode) Write bytes in EEPROM E2LAT=1 E2PGM=1 (Start programming cycle) Wait for end of programming (E2LAT=0 or interrupt) Write 1 to 16 bytes in the same row (with the same 12 Most Significant Bits of the address) E2LAT=0 E2PGM=0 (Read mode) 35 |
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