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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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H8S/2218 数据表(PDF) 638 Page - Renesas Technology Corp |
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H8S/2218 数据表(HTML) 638 Page - Renesas Technology Corp |
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638 / 750 page  Section 17 Flash Memory (F-ZTAT Version) Rev.6.00 Jun. 03, 2008 Page 590 of 698 REJ09B0074-0600 SWE1 set SWE1 cleared VCC FWE φ tOSC1 min 0 μs MD2 to MD0* 1 RES SWE1 bit x tMDS* 3 θ 1. 2. 3. Except when switching modes, the level of the mode pins (MD2 to MD0) must be fixed until power-off by pulling the pins up or down. See section 22.7, Flash Memory Characteristics. Mode programming setup time tMDS (min) = 200 ns. Period during which flash memory access is prohibited (x: Wait time after setting SWE1 bit)* 2 Period during which flash memory can be programmed (Execution of program in flash memory prohibited, and data reads other than verify operations prohibited) Notes: Programming/ erasing possible Wait time: Wait time: Figure 17.16 Power-On/Off Timing (User Program Mode) |
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