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H8S/2218 数据表(PDF) 708 Page - Renesas Technology Corp |
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H8S/2218 数据表(HTML) 708 Page - Renesas Technology Corp |
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708 / 750 page  Section 22 Electrical Characteristics Rev.6.00 Jun. 03, 2008 Page 660 of 698 REJ09B0074-0600 Item Symbol Min. Typ. Max. Unit Test Conditions Input low voltage RES, STBY, MD2 to MD0, TRST, TCK, TMS, TDI, EMLE, VBUS, UBPM, FWE*4 VIL –0.3 — VCC × 0.1 V EXTAL, NMI, ports 1, 3, 4, 7, 9, and A to G –0.3 — VCC × 0.2 V All output pins VOH VCC – 0.5 — — V IOH = –200 µA Output high voltage VCC – 1.0 — — V IOH = –1 mA Output low voltage All output pins VOL — — 0.4 V IOL = 0.8 mA Input leakage current RES, VBUS, UBPM, STBY, NMI, EMLE, MD2 to MD0, FWE* 4, ports 4, 9 | Iin | — — 1.0 µA Vin = 0.5 to VCC – 0.5 V Three-state leakage current (off state) Ports 1, 3, 7, and A to G | ITSI | — — 1.0 µA Vin = 0.5 to VCC – 0.5 V Input pull-up MOS current Ports A to E TDI, TCK, TMS, TRST – IP 10 — 300 µA Vin = 0 V Input capacitance RES, NMI Cin — — 30 pF Vin = 0 V f = 1 MHz All input pins other than RES, NMI — — 15 pF Ta = 25°C Current dissipation* 1 Normal operation ICC* 2 — 22 VCC = 3.3 V 35 VCC = 3.6 V mA f = 16 MHz (USB halts) — 31 VCC = 3.3 V 50 VCC = 3.6 V mA f = 24 MHz |
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