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H8S/2218 数据表(PDF) 731 Page - Renesas Technology Corp |
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H8S/2218 数据表(HTML) 731 Page - Renesas Technology Corp |
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731 / 750 page ![]() Section 22 Electrical Characteristics Rev.6.00 Jun. 03, 2008 Page 683 of 698 REJ09B0074-0600 22.7 Flash Memory Characteristics Table 22.10 lists the flash memory characteristics. Table 22.10 Flash Memory Characteristics Conditions: VCC = PLLVCC = DrVCC = 3.0 V to 3.6 V, Vref = 2.7 V to VCC, VSS = PLLVSS = DrVSS = 0 V, Ta = –20 to +75°C (Programming/erasing operating temperature range) Item Symbol Min. Typ. Max. Unit Programming time* 1 *2 *4 tP — 10 200 ms/128 bytes Erase time* 1 *3 *5 tE — 50 1000 ms/block Reprogramming count NWEC 100* 6 10000* 7 — Times Data retention time* 8 tDRP 10 — — Years Programming Wait time after PSU1 bit setting* 1 y 50 50 — µs Wait time after P1 bit setting* 1 *4 z0 28 30 32 µs z1 198 200 202 µs z2 8 10 12 µs Wait time after P1 bit clear* 1 α 5 5 — µs Wait time after PSU1 bit clear* 1 β 5 5 — µs Wait time after PV1 bit setting* 1 γ 4 4 — µs Wait time after H’FF dummy write* 1 ε 2 2 — µs Wait time after PV1 bit clear* 1 η 2 2 — µs Maximum programming count* 1 *4 N1 — — 6* 4 Times N2 — — 994* 4 Times Common Wait time after SWE1 bit setting* 1 x 1 1 — µs Wait time after SWE1 bit clear* 1 θ 100 100 — µs Erase Wait time after ESU1 bit setting* 1 y 100 100 — µs Wait time after E1 bit setting* 1 *5 z 10 10 100 ms Wait time after E1 bit clear* 1 α 10 10 — µs Wait time after ESU1 bit clear* 1 β 10 10 — µs Wait time after EV1 bit setting* 1 γ 20 20 — µs Wait time after H'FF dummy write* 1 ε 2 2 — µs Wait time after EV1 bit clear* 1 η 4 4 — µs Maximum erase count* 1 *5 N — — 100 Times Notes: 1. Make each time setting in accordance with the program/program-verify flowchart or erase/erase-verify flowchart. 2. Programming time per 128 bytes (Shows the total period for which the P-bit in the flash memory control register (FLMCR1) is set. It does not include the programming verification time.) |
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