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SH7708 数据表(PDF) 285 Page - Renesas Technology Corp |
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SH7708 数据表(HTML) 285 Page - Renesas Technology Corp |
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285 / 633 page ![]() 267 CKIO CKE CSn RAS CASxx RD/ WR TRr TRrw TRrw (Tpc) (Tpc) Figure 10.30 Synchronous DRAM Auto-Refresh Timing 2. Self-Refreshing Self-refresh mode is a kind of standby mode in which the refresh timing and refresh addresses are generated within the synchronous DRAM. Self-refreshing is activated by setting both the RMODE bit and the RFSH bit to 1. The self-refresh state is maintained while the CKE signal is low. Synchronous DRAM cannot be accessed while in the self-refresh state. Self-refresh mode is cleared by clearing the RMODE bit to 0. After self-refresh mode has been cleared, command issuance is disabled for the number of cycles specified by the TPC bits in MCR. Self-refresh timing is shown in figure 10.31. Settings must be made so that self-refresh clearing and data retention are performed correctly, and auto-refreshing is performed at the correct intervals. When self-refreshing is activated from the state in which auto-refreshing is set, or when exiting standby mode other than through a power-on reset, auto-refreshing is restarted if RFSH is set to 1 and RMODE is cleared to 0 when self-refresh mode is cleared. If the transition from clearing of self- refresh mode to the start of auto-refreshing takes time, this time should be taken into consideration when setting the initial value of RTCNT. Making the RTCNT value 1 less than the RTCOR value will enable refreshing to be started immediately. After self-refreshing has been set, the self-refresh state continues even if the chip standby state is entered using the SH7708 Series’s standby function, and is maintained even after recovery from standby mode other than through a power-on reset. For a power-on reset, the bus state controller’s registers are initialized, thereby clearing the self-refresh state. |
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