EM357-RTR datasheet(19/240 Pages) ETC2

19 / 240 page

EM351 / EM357

2-6

120-035X-000D

Preliminary

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Input pull-up resistor value

RIPU

kΩ

Input pull-down resistor value

RIPD

kΩ

Output voltage for logic 0

VOL

(IOL = 4 mA for standard pads, 8 mA for

high current pads)

0.18 x

VDD_PADS

Output voltage for logic 1

VOH

(IOH = 4 mA for standard pads, 8 mA for

high current pads)

0.82 x

VDD_PADS

Output source current (standard current

pad)

IOHS

Output sink current (standard current pad)

IOLS

Output source current

high current pad: PA6, PA7, PB6, PB7, PC0

IOHH

Output sink current

high current pad: PA6, PA7, PB6, PB7, PC0

IOLH

Total output current (for I/O Pads)

IOH + IOL

2.6

Non-RF System Electrical Characteristics

Table 2-6 lists the non-RF system level characteristics for the EM35x.

Table 2-6. Non-RF System Specifications

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

System wake time from deep sleep

From wakeup event to first ARM® CortexTM-

M3 instruction running from 6 MHz internal

RC clock

Includes supply ramp time and oscillator

startup time

110

µs

Shutdown time going into deep sleep

From last ARM® CortexTM-M3 instruction to

deep sleep mode

µs

EM357-RTR 数据表(PDF) 19 Page - List of Unclassifed Manufacturers

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