S2-LP datasheet(19/90 Pages) STMICROELECTRONICS

19 / 90 page

S2-LP

Specifications

DocID029944 Rev 1

19/90

In order to avoid potential RF performance degradations, the crystal frequency should be

chosen to satisfy the following equation:

�� − ROUND (��

��

) �� ≥ 1MHz

where n is an integer in the set [1-

7, B] (B is the synthesizer’s divider ratio).

Table 15: Crystal oscillator characteristics

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Crystal frequency

MHz

Frequency tolerance(1)

± 40

ppm

Minimum requirement

on external reference

phase noise mask

(

�� = 26MHz), to

avoid degradation on

synthesizer

phase/noise

10 kHz

-135

dBc/Hz

100 kHz

-140

1 MHz

-140

10 MHz

-140

Programmable trans-

conductance of the

oscillator at start-up

13 -43

Startup time(2)

VBAT=1.8 V, <

�� = 26MHz

200

µs

Notes:

(1)Including initial tolerance, crystal loading, aging, and temperature dependence. The acceptable crystal tolerance

depends on RF frequency and channel spacing/bandwidth.

(2)Startup times are crystal dependent. The crystal oscillator trans-conductance can be tuned to compensate the

variation of crystal oscillator series resistance

Table 16: Ultra-low power RC oscillator

Parameter

Test conditions

Typ.

Unit

Calibrated frequency

Calibrated RC oscillator frequency is derived from

crystal oscillator frequency.

33.3(1)

kHz

Frequency accuracy after

calibration

±1

Notes:

(1)Depending on the crystal frequency, the reported value is referring to 50MHz.

4.8

RF receiver

Characteristics measured over recommended operating conditions unless otherwise

specified. All typical values are referred to 25 °C temperature, VBAT = 3.0 V, no frequency

offset in the RX signal. All performance is referred to a 50 Ω antenna connector, via the

reference design.

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