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数据搜索系统，热门电子元器件搜索 |
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RA4M1 数据表(PDF) 49 Page - Renesas Technology Corp |
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RA4M1 数据表(HTML) 49 Page - Renesas Technology Corp |
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49 / 130 page  R01DS0355EJ0100 Rev.1.00 Page 49 of 130 Oct 8, 2019 RA4M1 Group 2. Electrical Characteristics Figure 2.20 Voltage dependency in low-voltage mode (reference data) 0 1 2 3 4 5 6 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VCC (V) Ta = 105 C , ICLK = 4 MHz*2 , ICLK = 4 MHz*1 Ta = 25 C , ICLK = 1 MHz*2 Ta = 105 C Ta = 25 C, ICLK = 1 MHz*1 Ta = 25 C , ICLK = 1 MHz *1 Ta = 25 C , ICLK = 4 MHz *1 , ICLK = 4 MHz *2 Ta = 105 C , ICLK = 1 MHz Ta = 105 C *2 Note 1. All peripheral operations except any BGO operation are operating normally. This is the average of the actual measurements of the sample cores during product evaluation. Note 2. All peripheral operations except any BGO operation are operating at maximum. This is the average of the actual measurements for the upper limit samples during product evaluation. |
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