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RA4M1 数据表(PDF) 100 Page - Renesas Technology Corp

部件名 RA4M1
功能描述  High efficiency 48-MHz Arm Cortex-M4 core, 256-KB code flash memory
PDF  130 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

RA4M1 数据表(HTML) 100 Page - Renesas Technology Corp

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R01DS0355EJ0100 Rev.1.00
Page 100 of 130
Oct 8, 2019
RA4M1 Group
2. Electrical Characteristics
2.9
POR and LVD Characteristics
Note 1.
These characteristics apply when noise is not superimposed on the power supply. When a setting causes this voltage detection
level to overlap with that of the voltage detection circuit, it cannot be specified whether LVD1 or LVD2 is used for voltage
detection.
Note 2.
# in the symbol Vdet0_# denotes the value of the OFS1.VDSEL1[2:0] bits.
Note 3.
# in the symbol Vdet1_# denotes the value of the LVDLVLR.LVD1LVL[4:0] bits.
Note 4.
# in the symbol Vdet2_# denotes the value of the LVDLVLR.LVD2LVL[2:0] bits.
Table 2.56
Power-on reset circuit and voltage detection circuit characteristics (1)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Voltage detection
level*1
Power-on reset (POR)
VPOR
1.27
1.42
1.57
V
Figure 2.73,
Figure 2.74
Voltage detection circuit (LVD0)*2
Vdet0_0
3.68
3.85
4.00
V
Figure 2.75
At falling edge
VCC
Vdet0_1
2.68
2.85
2.96
Vdet0_2
2.38
2.53
2.64
Vdet0_3
1.78
1.90
2.02
Vdet0_4
1.60
1.69
1.82
Voltage detection circuit (LVD1)*3
Vdet1_0
4.13
4.29
4.45
V
Figure 2.76
At falling edge
VCC
Vdet1_1
3.98
4.16
4.30
Vdet1_2
3.86
4.03
4.18
Vdet1_3
3.68
3.86
4.00
Vdet1_4
2.98
3.10
3.22
Vdet1_5
2.89
3.00
3.11
Vdet1_6
2.79
2.90
3.01
Vdet1_7
2.68
2.79
2.90
Vdet1_8
2.58
2.68
2.78
Vdet1_9
2.48
2.58
2.68
Vdet1_A
2.38
2.48
2.58
Vdet1_B
2.10
2.20
2.30
Vdet1_C
1.84
1.96
2.05
Vdet1_D
1.74
1.86
1.95
Vdet1_E
1.63
1.75
1.84
Vdet1_F
1.60
1.65
1.73
Voltage detection circuit (LVD2)*4
Vdet2_0
4.11
4.31
4.48
V
Figure 2.77
At falling edge
VCC
Vdet2_1
3.97
4.17
4.34
Vdet2_2
3.83
4.03
4.20
Vdet2_3
3.64
3.84
4.01



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