RA4M1 datasheet(82/130 Pages) RENESAS

部件名	RA4M1

功能描述	High efficiency 48-MHz Arm Cortex-M4 core, 256-KB code flash memory

PDF	130 Pages

Scroll/Zoom	100%

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

标志

82 / 130 page

R01DS0355EJ0100 Rev.1.00

Page 82 of 130

Oct 8, 2019

RA4M1 Group

2. Electrical Characteristics

2.3.11

SSIE Timing

Figure 2.60

SSIE clock input/output timing

Table 2.38

SSIE timing

Conditions: VCC = 1.6 to 5.5 V

Parameter

Symbol

Min

Max

Unit

Test conditions

SSIE

AUDIO_CLK input

frequency

2.7 V or above

tAUDIO

-25

MHz

1.6 V or above

Output clock period

250

Figure 2.60

Input clock period

250

Clock high pulse

width

1.8 V or above

tHC

100

1.6 V or above

200

Clock low pulse

width

1.8 V or above

tLC

100

1.6 V or above

200

Clock rise time

tRC

-25

Data delay

2.7 V or above

tDTR

-65

Figure 2.61,

Figure 2.62

1.8 V or above

105

1.6 V or above

140

Set-up time

2.7 V or above

tSR

1.8 V or above

1.6 V or above

140

Hold time

tHTR

SSITXD0 output

delay from

SSILRCK0/SSIFS0

change time

1.8 V or above

TDTRW

105

Figure 2.63

1.6 V or above

140

SSIBCK0

tHC

tLC

tRC

tI, tO

RA4M1 数据表(PDF) 82 Page - Renesas Technology Corp

RA4M1 数据表(HTML) 82 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

数据表下载

链接网址

RA4M1 数据表(PDF) 82 Page - Renesas Technology Corp

RA4M1 数据表(HTML) 82 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

数据表 下载

链接网址

数据表下载