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RA4M1 数据表(PDF) 97 Page - Renesas Technology Corp

部件名 RA4M1
功能描述  High efficiency 48-MHz Arm Cortex-M4 core, 256-KB code flash memory
PDF  130 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

RA4M1 数据表(HTML) 97 Page - Renesas Technology Corp

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R01DS0355EJ0100 Rev.1.00
Page 97 of 130
Oct 8, 2019
RA4M1 Group
2. Electrical Characteristics
2.6
DAC12 Characteristics
Table 2.51
D/A conversion characteristics (1)
Conditions: VCC = AVCC0 = 1.8 to 5.5 V
Reference voltage = VREFH or VREFL selected
Parameter
Min
Typ
Max
Unit
Test conditions
Resolution
-
-
12
bit
-
Resistive load
30
-
-
kΩ
-
Load capacitance
-
-
50
pF
-
Output voltage range
0.35
-
AVCC0 - 0.47
V
-
DNL differential nonlinearity error
-
±0.5
±1.0
LSB
-
INL integral nonlinearity error
-
±2.0
±8.0
LSB
-
Offset error
-
-
±20
mV
-
Full-scale error
-
-
±20
mV
-
Output impedance
-
5
-
Ω
-
Conversion time
-
-
30
μs
-
Table 2.52
D/A conversion characteristics (2)
Conditions: VCC = AVCC0 = 1.8 to 5.5 V
Reference voltage = AVCC0 or AVSS0 selected
Parameter
Min
Typ
Max
Unit
Test conditions
Resolution
-
-
12
bit
-
Resistive load
30
-
-
kΩ
-
Load capacitance
-
-
50
pF
-
Output voltage range
0.35
-
AVCC0 - 0.47
V
-
DNL differential nonlinearity error
-
±0.5
±2.0
LSB
-
INL integral nonlinearity error
-
±2.0
±8.0
LSB
-
Offset error
-
-
±30
mV
-
Full-scale error
-
-
±30
mV
-
Output impedance
-
5
-
Ω
-
Conversion time
-
-
30
μs
-
Table 2.53
D/A conversion characteristics (3)
Conditions: VCC = AVCC0 = 1.8 to 5.5 V
Reference voltage = internal reference voltage selected
Parameter
Min
Typ
Max
Unit
Test conditions
Resolution
-
-
12
bit
-
Internal reference voltage (Vbgr)
1.36
1.43
1.50
V
-
Resistive load
30
-
-
kΩ
-
Load capacitance
-
-
50
pF
-
Output voltage range
0.35
-
Vbgr
V
-
DNL differential nonlinearity error
-
±2.0
±16.0
LSB
-
INL integral nonlinearity error
-
±8.0
±16.0
LSB
-
Offset error
-
-
±30
mV
-
Output impedance
-
5
-
Ω
-
Conversion time
-
-
30
μs
-



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