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AM29BDD160G 数据表(PDF) 19 Page - Advanced Micro Devices

部件名 AM29BDD160G
功能描述  16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
PDF  79 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29BDD160G 数据表(HTML) 19 Page - Advanced Micro Devices

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June 7, 2006
Am29BDD160G
17
Synchronous (Burst) Read Operation
The Am29BDD160 is capable of performing burst read
operations to improve total system data throughput.
The device is available in three burst modes of opera-
tion: linear and burst mode. 2, 4 and 8 double word
(x32) and 4 and 8 word (x16) accesses are config-
urable as either sequential burst accesses. 16 and 32
word (x16) accesses are only configurable as linear
burst accesses. Additional options for all burst modes
include initial access delay configurations (2–16
CLKs) Device configuration for burst mode operation
is accomplished by writing the Configuration Register
with the desired burst configuration information. Once
the Configuration Register is written to enable burst
mode operation, all subsequent reads from the array
are returned using the burst mode protocols. Like the
main memory access, the SecSi Sector memory is ac-
cessed with the same burst or asynchronous timing as
defined in the Configuration Register. However, the
user must recognize that continuous burst operations
past the 256 byte SecSi boundary returns invalid data.
Burst read operations occur only to the main flash
memory arrays. The Configuration Register and pro-
tection bits are treated as single cycle reads, even
when burst mode is enabled. Read operations to
these locations results in the data remaining valid
while OE# is at V
IL, regardless of the number of CLK
cycles applied to the device.
Linear Burst Read Operations
Linear burst read mode reads either 4, 8, 16, or 32
words (1 word = 16 bits), depending upon the Configu-
ration Register option. If the device is configured with
a 32 bit interface (WORD# = V
IH), the burst access is
comprised of 4 clocked reads for 8 words and 16
clocked reads for 32 words (See Table 6 for all valid
burst output sequences). The number of clocked
reads is doubled when the device is configured in the
16-bit data bus mode (WORD# = V
IL). The IND/WAIT#
pin transitions active (V
IL) during the last transfer of
data during a linear burst read before a wrap around,
indicating that the system should initiate another
ADV# to start the next burst access. If the system con-
tinues to clock the device, the next access wraps
around to the starting address of the previous burst
access. The IND/WAIT# signal remains inactive (float-
ing) when not active. See Table 6 for a complete 32
and 16 bit data bus interface order. 16 and 32 word
options are restricted to sequential burst accesses,
only.
Table 6.
16-Bit and 32-Bit Linear and BurstData Order
Data Transfer Sequence
(Independent of the WORD#
pin)
Output Data Sequence (Initial Access Address)
(x16)
Two Linear Data Transfers,
(x32 only)
0-1 (A0 = 0)
1-0 (A0 = 1)
Four Linear Data Transfers
0-1-2-3 (A0:A-1/A1-A0 = 00)
1-2-3-0 (A0:A-1/A1-A0 = 01)
2-3-0-1 (A:A-1/A1-A0 = 10)
3-0-1-2 (A0:A-1/A1-A0 = 11)
Eight Linear Data Transfers
0-1-2-3-4-5-6-7 (A1:A-1A2-A0 = 000)
1-2-3-4-5-6-7-0 (A1:A-1/A2-A0 = 001)
2-3-4-5-6-7-0-1 (A1:A-1/A2-A0 = 010)
3-4-5-6-7-0-1-2 (A1:A-1/A2-A0 = 011)
4-5-6-7-0-1-2-3 (A1:A-1/A2-A0 = 100)
5-6-7-0-1-2-3-4 (A1:A-1/A2-A0 = 101)
6-7-0-1-2-3-4-5 (A1:A-1/A2-A0 = 110)
7-0-1-2-3-4-5-6 (A1:A-1/A2-A0 = 111)



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