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AM29BDD160G 数据表(PDF) 63 Page - Advanced Micro Devices |
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AM29BDD160G 数据表(HTML) 63 Page - Advanced Micro Devices |
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63 / 79 page ![]() June 7, 2006 Am29BDD160G 61 AC CHARACTERISTICS Figure 17. Asynchronous Command Write Timing Note: All commands have the same number of cycles in both asynchronous and synchronous modes, including the READ/RESET command. Only a single array access occurs after the F0h command is entered. All subsequent accesses are burst mode when the burst mode option is enabled in the Configuration Register. Figure 18. Synchronous Command Write/Read Timing Note: All commands have the same number of cycles in both asynchronous and synchronous modes, including the READ/RESET command. Only a single array access occurs after the F0h command is entered. All subsequent accesses are burst mode when the burst mode option is enabled in the Configuration Register. ADV# CE# Valid Data A18-A0 DQ31-DQ0 WE# OE# IND/WAIT# CLK Stable Address tCS tCH tAS tAH tOEH tDS tDH tWPH tWC tAS CLK ADV# Data In A18-A0, WORD# DQ31-DQ0 OE# Data Out Valid Address WE# IND/WAIT# CE# Valid Address tDS tWP tCES tADVP tADVCS tWCKS tOE tACS tACH tACS tDF tEHQZ tDH tWADVH tADVCH 10 ns tACH tWC |
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