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数据搜索系统，热门电子元器件搜索 |
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AM29BDD160G 数据表(PDF) 72 Page - Advanced Micro Devices |
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AM29BDD160G 数据表(HTML) 72 Page - Advanced Micro Devices |
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72 / 79 page  70 Am29BDD160G June 7, 2006 AC CHARACTERISTICS Alternate CE# Controlled Erase/Program Operations Notes: 1. Not 100% tested. 2. See the section for more information. Parameter All Speed Options JEDEC Std. Description Unit tAVAV tWC Write Cycle Time (Note 1) Min65 ns tAVEL tAS Address Setup Time Min0 ns tELAX tAH Address Hold Time Min45 ns tDVEH tDS Data Setup Time Min 35ns tEHDX tDH Data Hold Time Min2 ns tOES Output Enable Setup Time Min0 ns t GHEL t GHEL Read Recovery Time Before Write (OE# High to WE# Low) Min0 ns t WLEL t WS WE# Setup Time Min0 ns t EHWH t WH WE# Hold Time Min0 ns t WADVS WE# Rising Edge Setup to ADV# Falling Edge Min5 ns t WP WE# Width Min15 ns t WADVH WE# Falling Edge After ADV# Falling Edge Min0 ns t WCKS WE# Rising Edge Setup to CLK Rising Edge Min5 ns t ELEH t CP CE# Pulse Width Min 35ns t EHEL t CPH CE# Pulse Width High Min 30ns t WHWsH1 t WHWH1 Programming Operation (Note 2) Typ 9µs t WHWH2 t WHWH2 Sector Erase Operation (Note 2) Typ 0.5 sec. |
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