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AM29BDD160G 数据表(PDF) 51 Page - Advanced Micro Devices

部件名 AM29BDD160G
功能描述  16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
PDF  79 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29BDD160G 数据表(HTML) 51 Page - Advanced Micro Devices

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June 7, 2006
Am29BDD160G
49
WRITE OPERATION STATUS
The device provides several bits to determine the sta-
tus of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7,
and RY/BY#. Table 23 and the following subsections
describe the functions of these bits. DQ7, RY/BY#, and
DQ6 each offer a method for determining whether a
program or erase operation is complete or in progress.
These three bits are discussed first.
DQ7: Data# Polling
The Am29BDD160 features a Data# polling flag as a
method to indicate to the host system whether the em-
bedded algorithms are in progress or are complete.
During the Embedded Program Algorithm an attempt
to read the bank in which programming was initiated
will produce the complement of the data last written to
DQ7. Upon completion of the Embedded Program Al-
gorithm, an attempt to read the device will produce the
true last data written to DQ7. Note that DATA# polling
returns invalid data for the address being programmed
or erased.
For example, the data read for an address pro-
grammed as 0000 0000 1000 0000b will return XXXX
XXXX 0XXX XXXXb during an Embedded Program
operation. Once the Embedded Program Algorithm is
complete, the true data is read back on DQ7. Note that
at the instant when DQ7 switches to true data, the
other bits may not yet be true. However, they will all be
true data on the next read from the device. Please
note that Data# polling may give misleading status
when an attempt is made to write to a protected sec-
tor.
For chip erase, the Data# polling flag is valid after the
rising edge of the sixth WE# pulse in the six write
pulse sequence. For sector erase, the Data# polling is
valid after the last rising edge of the sector erase WE#
pulse. Data# polling must be performed at sector ad-
dresses within any of the sectors being erased and not
a sector that is a protected sector. Otherwise, the sta-
tus may not be valid. DQ7 = 0 during an Embedded
Erase Algorithm (chip erase or sector erase operation)
but will return a “1” after the operation completes be-
cause it will have dropped back into read mode.
In asynchronous mode, just prior to the completion of
the Embedded Algorithm operations, DQ7 may
change asynchronously while OE# is asserted low. (In
synchronous mode, ADV# exhibits this behavior.) The
status information may be invalid during the instance
of transition from status information to array (memory)
data. An extra validity check is therefore specified in
the data polling algorithm. The valid array data on
DQ31–DQ0 (DQ15–DQ0 when WORD# = 0) is avail-
able for reading on the next successive read attempt.
The Data# polling feature is only active during the Em-
bedded Programming Algorithm, Embedded Erase Al-
gorithm, Erase Suspend, Erase Suspend-Program
mode, or sector erase time-out.
If the user attempts to write to a protected sector,
Data# polling will be activated for about 1 µs: the de-
vice will then return to read mode, with the data from
the protected sector unchanged. If the user attempts
to erase a protected sector, Toggle Bit (DQ6) will be
activated for about 150 µs; the device will then return
to read mode, without having erased the protected
sector.
Table 23 shows the outputs for Data# Polling on DQ7.
Figure 6 shows the Data# Polling algorithm. Figure 27
shows the timing diagram for synchronous status DQ7
data polling.
RY/BY#: Ready/Busy#
The device provides a RY/BY# open drain output pin as
a way to indicate to the host system that the Embedded
Algorithms are either in progress or have been com-
pleted. If the output is low, the device is busy with either
a program, erase, or reset operation. If the output is
floating, the device is ready to accept any read/write or
erase operation. When the RY/BY# pin is low, the de-
vice will not accept any additional program or erase
commands with the exception of the Erase suspend
command. If the device has entered Erase Suspend
mode, the RY/BY# output will be floating. For program-
ming, the RY/BY# is valid (RY/BY# = 0) after the rising
edge of the fourth WE# pulse in the four write pulse se-
quence. For chip erase, the RY/BY# is valid after the
rising edge of the sixth WE# pulse in the six write pulse
sequence. For sector erase, the RY/BY# is also valid
after the rising edge of the sixth WE# pulse.
If RESET# is asserted during a program or erase oper-
ation, the RY/BY# pin remains a “0” (busy) until the in-
ternal reset operation is complete, which requires a
time of tREADY (during Embedded Algorithms). The sys-
tem can thus monitor RY/BY# to determine whether the
reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “floating”), the reset operation is com-
pleted in a time of tREADY (not during Embedded Algo-
rithms). The system can read data tRH after the
RESET# pin returns to VIH.
Since the RY/BY# pin is an open-drain output, several
RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC. An external pull-up resistor is re-
quired to take RY/BY# to a VIH level since the output is
an open drain.
Table 23 shows the outputs for RY/BY#. Figures 15, 19,
21 and 22 shows RY/BY# for read, reset, program, and
erase operations, respectively.



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