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AM29BDD160G 数据表(PDF) 36 Page - Advanced Micro Devices |
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AM29BDD160G 数据表(HTML) 36 Page - Advanced Micro Devices |
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36 / 79 page ![]() 34 Am29BDD160G June 7, 2006 COMMAND DEFINITIONS Writing specific address and data commands or se- quences into the command register initiates device op- erations. Tables 18-21 define the valid register command sequences. Writing incorrect address and data values or writing them in the improper se- quence resets the device to reading array data. All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the rising edge of WE# or CE#, whichever happens first. Refer to the AC Characteristics section for timing diagrams. Reading Array Data in Non-burst Mode The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is also ready to read array data after completing an Embedded Program or Em- bedded Erase algorithm. After the device accepts an Erase Suspend com- mand, the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After completing a programming opera- tion in the Erase Suspend mode, the system may once again read array data with the same exception. See Sector Erase and Program Suspend Command for more information on this mode. The system must issue the reset command to re-en- able the device for reading array data if DQ5 goes high, or while in the autoselect mode. See the The program- ming of the PPB Lock Bit for a given sector can be ver- ified by writing a PPB Lock Bit status verify command to the device. section. See also Asynchronous Read Operation (Non-Burst) in the Key to Switching Waveforms section for more information. See the Sector Erase and Program Resume Command sections for more information on this mode. Reading Array Data in Burst Mode The device is capable of very fast Burst mode read op- erations. The configuration register sets the read con- figuration, burst order, frequency configuration, and burst length. Upon power on, the device defaults to the asynchro- nous mode. In this mode, CLK, and ADV# are ignored. The device operates like a conventional Flash device. Data is available t ACC/tCE nanoseconds after address becomes stable, CE# become asserted. The device enters the burst mode by enabling synchronous burst reads in the configuration register. The device exits burst mode by disabling synchronous burst reads in the configuration register. (See Command Definitions). The RESET# command will not terminate the Burst mode. System reset (power on reset) will terminate the Burst mode. The device has the regular control pins, i.e. Chip En- able (CE#), Write Enable (WE#), and Output Enable (OE#) to control normal read and write operations. Moreover, three additional control pins have been added to allow easy interface with minimal glue logic to a wide range of microprocessors / microcontrollers for high performance Burst read capability. These ad- ditional pins are Address Valid (ADV#) and Clock (CLK). CE#, OE#, and WE# are asynchronous (rela- tive to CLK). The Burst mode read operation is a syn- chronous operation tied to the edge of the clock. The microprocessor / microcontroller supplies only the ini- tial address, all subsequent addresses are automati- cally generated by the device with a timing defined by the Configuration Register definition. The Burst read cycle consists of an address phase and a correspond- ing data phase. During the address phase, the Address Valid (ADV#) pin is asserted (taken Low) for one clock period. To- gether with the edge of the CLK, the starting burst ad- dress is loaded into the internal Burst Address Counter. The internal Burst Address Counter can be configured to either the Linear modes (See “Initial Ac- cess Delay Configuration”). During the data phase, the first burst data is available after the initial access time delay defined in the Config- uration Register. For subsequent burst data, every ris- ing (or falling) edge of the CLK will trigger the output data with the burst output delay and sequence defined in the Configuration Register. Tables 17–20 show all the commands executed by the device. The device automatically powers up in the read/reset state. It is not necessary to issue a read/re- set command after power-up or hardware reset. Read/Reset Command After power-up or hardware reset, the Am29BDD160 automatically enter the read state. It is not necessary to issue the reset command after power-up or hard- ware reset. Standard microprocessor cycles retrieve array data, however, after power-up, only asynchro- nous accesses are permitted since the Configuration Register is at its reset state with burst accesses dis- abled. The Reset command is executed when the user needs to exit any of the other user command sequences (such as autoselect, program, chip erase, etc.) to re- turn to reading array data. There is no latency be- tween executing the Reset command and reading array data. |
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