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AM29BDD160G 数据表(PDF) 36 Page - Advanced Micro Devices

部件名 AM29BDD160G
功能描述  16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
PDF  79 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29BDD160G 数据表(HTML) 36 Page - Advanced Micro Devices

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34
Am29BDD160G
June 7, 2006
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations. Tables 18-21 define the valid register
command sequences. Writing incorrect address and
data values or writing them in the improper se-
quence resets the device to reading array data.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the AC Characteristics section for timing
diagrams.
Reading Array Data in Non-burst Mode
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Embedded Program or Em-
bedded Erase algorithm.
After the device accepts an Erase Suspend com-
mand, the device enters the Erase Suspend mode.
The system can read array data using the standard
read timings, except that if it reads at an address
within erase-suspended sectors, the device outputs
status data. After completing a programming opera-
tion in the Erase Suspend mode, the system may
once again read array data with the same exception.
See Sector Erase and Program Suspend Command
for more information on this mode.
The system must issue the reset command to re-en-
able the device for reading array data if DQ5 goes high,
or while in the autoselect mode. See the The program-
ming of the PPB Lock Bit for a given sector can be ver-
ified by writing a PPB Lock Bit status verify command
to the device. section.
See also Asynchronous Read Operation (Non-Burst) in
the Key to Switching Waveforms section for more
information. See the Sector Erase and Program Resume
Command sections for more information on this mode.
Reading Array Data in Burst Mode
The device is capable of very fast Burst mode read op-
erations. The configuration register sets the read con-
figuration, burst order, frequency configuration, and
burst length.
Upon power on, the device defaults to the asynchro-
nous mode. In this mode, CLK, and ADV# are ignored.
The device operates like a conventional Flash device.
Data is available t
ACC/tCE nanoseconds after address
becomes stable, CE# become asserted. The device
enters the burst mode by enabling synchronous burst
reads in the configuration register. The device exits
burst mode by disabling synchronous burst reads in
the configuration register. (See Command Definitions).
The RESET# command will not terminate the Burst
mode. System reset (power on reset) will terminate
the Burst mode.
The device has the regular control pins, i.e. Chip En-
able (CE#), Write Enable (WE#), and Output Enable
(OE#) to control normal read and write operations.
Moreover, three additional control pins have been
added to allow easy interface with minimal glue logic
to a wide range of microprocessors / microcontrollers
for high performance Burst read capability. These ad-
ditional pins are Address Valid (ADV#) and Clock
(CLK). CE#, OE#, and WE# are asynchronous (rela-
tive to CLK). The Burst mode read operation is a syn-
chronous operation tied to the edge of the clock. The
microprocessor / microcontroller supplies only the ini-
tial address, all subsequent addresses are automati-
cally generated by the device with a timing defined by
the Configuration Register definition. The Burst read
cycle consists of an address phase and a correspond-
ing data phase.
During the address phase, the Address Valid (ADV#)
pin is asserted (taken Low) for one clock period. To-
gether with the edge of the CLK, the starting burst ad-
dress is loaded into the internal Burst Address
Counter. The internal Burst Address Counter can be
configured to either the Linear modes (See “Initial Ac-
cess Delay Configuration”).
During the data phase, the first burst data is available
after the initial access time delay defined in the Config-
uration Register. For subsequent burst data, every ris-
ing (or falling) edge of the CLK will trigger the output
data with the burst output delay and sequence defined
in the Configuration Register.
Tables 17–20 show all the commands executed by the
device. The device automatically powers up in the
read/reset state. It is not necessary to issue a read/re-
set command after power-up or hardware reset.
Read/Reset Command
After power-up or hardware reset, the Am29BDD160
automatically enter the read state. It is not necessary
to issue the reset command after power-up or hard-
ware reset. Standard microprocessor cycles retrieve
array data, however, after power-up, only asynchro-
nous accesses are permitted since the Configuration
Register is at its reset state with burst accesses dis-
abled.
The Reset command is executed when the user needs
to exit any of the other user command sequences
(such as autoselect, program, chip erase, etc.) to re-
turn to reading array data. There is no latency be-
tween executing the Reset command and reading
array data.



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