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AM29BDD160G 数据表(PDF) 74 Page - Advanced Micro Devices

部件名 AM29BDD160G
功能描述  16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
PDF  79 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29BDD160G 数据表(HTML) 74 Page - Advanced Micro Devices

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Am29BDD160G
June 7, 2006
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 2.5 V V
CC, 1M cycles. Additionally, programming
typicals assume checkerboard pattern.
2. Under worst case conditions of 145°C, V
CC = 2.5 V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Tables 19 and 20 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1M cycles.
7. PPBs have a minimum program/erase cycle endurance of 100 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
PQFP AND FORTIFIED BGA PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
1.05
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
23
230
s
Double Word Program Time
18
250
µs
Excludes system level
overhead (Note 5)
Word (x16) Program Time
15
210
µs
Accelerated Double Word Program Time
8
130
µs
Accelerated Chip Program Time
5
50
s
Chip Program Time
(Note 3)
x16
10
100
s
x3212
120
Description
MinMax
Input voltage with respect to V
SS on all pins except I/O pins
(including A9, ACC, and WP#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
VCC Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN = 0
6
7.5pF
C
OUT
Output Capacitance
V
OUT = 0
8.512
pF
C
IN2
Control Pin Capacitance
V
IN = 0
7.5
9
pF
Parameter
Test Conditions
MinUnit
Minimum Pattern Data Retention Time
150
°C10
Years
125
°C20
Years



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