AM29BDD160G datasheet(3/79 Pages) AMD

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DATA SHEET

Publication# 24960

Rev: D Amendment: 5

Issue Date: June 7, 2006

Refer to AMD’s Website (www.amd.com) for the latest information.

Am29BDD160G

16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode,

Dual Boot, Simultaneous Read/Write Flash Memory

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

Simultaneous Read/Write operations

— Data can be continuously read from one bank while

executing erase/program functions in other bank.

(–40°C to 85°C, 56 MHz and below only)

— Zero latency between read and write operations

— Two bank architecture: 75%/25%

User-Defined x16 or x32 Data Bus

Dual Boot Block

— Top and bottom boot in the same device

Flexible sector architecture

— Eight 8 Kbytes, thirty 64 Kbytes, and eight 8 Kbytes

sectors

Manufactured on 0.17 µm process technology

SecSi (Secured Silicon) Sector (256 Bytes)

— Current version of device has 64 Kbytes; future

versions will have 256 bytes

— Factory locked and identifiable: 16 bytes for secure,

random factory Electronic Serial Number; remainder

may be customer data programmed by AMD

— Customer lockable: Can be read, programmed, or

erased just like other sectors. Once locked, data

cannot be changed

Programmable Burst interface

— Interface to any high performance processor

— Modes of Burst Read Operation:

Linear Burst: 4 double words (x32), 8 words (x16)

and double words (x32), and 32 words (x16) with

wrap around

Single power supply operation

— Optimized for 2.5 to 2.75 volt read, erase, and

program operations

Compatible with JEDEC standards (JC42.4)

— Pinout and software compatible with

single-power-supply flash standard

PERFORMANCE CHARACTERISTICS

High performance read access

— Initial/random access time as fast as 54 ns

— Burst access time as fast as 9 ns for ball grid array

package

Ultra low power consumption

— Burst Mode Read: 90 mA @ 66 MHz max

— Program/Erase: 50 mA max

— Standby mode: CMOS: 60 µA max

Minimum 1 million write cycles guaranteed per

sector

20 year data retention at 125°C

VersatileI/O

TM control

— Device generates data output voltages and tolerates

data input voltages as determined by the voltage on

the V

IO pin

— 1.65 V to 2.75 V compatible I/O signals

SOFTWARE FEATURES

Persistent Sector Protection

— A command sector protection method to lock

combinations of individual sectors and sector groups

to prevent program or erase operations within that

sector (requires only V

CC levels)

Password Sector Protection

— A sophisticated sector protection method to lock

combinations of individual sectors and sector groups

to prevent program or erase operations within that

sector using a user-definable 64-bit password

Supports Common Flash Interface (CFI)

Unlock Bypass Program Command

— Reduces overall programming time when issuing

multiple program command sequences

Data# Polling and toggle bits

— Provides a software method of detecting program or

erase operation completion

HARDWARE FEATURES

Program Suspend/Resume & Erase

Suspend/Resume

— Suspends program or erase operations to allow

reading, programming, or erasing in same bank

Hardware Reset (RESET#), Ready/Busy# (RY/BY#),

and Write Protect (WP#) inputs

ACC input

— Accelerates programming time for higher throughput

during system production

Package options

— 80-pin PQFP

— 80-ball Fortified BGA

NOTE: For new designs, S29CD016G supersedes Am29BDD160G and is the factory-recommended migration path for this device. Please refer to the S29CD016G datasheet for specifica-

tions and ordering information.

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