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ST7LITE49M 数据表(PDF) 156 Page - STMicroelectronics |
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ST7LITE49M 数据表(HTML) 156 Page - STMicroelectronics |
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156 / 188 page  Electrical characteristics ST7LITE49M 156/188 13.7 Memory characteristics TA = -40°C to 125 °C, unless otherwise specified. Table 82. RAM and hardware registers characteristics Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode(1) 1. Minimum VDD supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware registers (only in Halt mode). Guaranteed by construction, not tested in production. Halt mode (or Reset) 1.6 V Table 83. Flash program memory characteristics Symbol Parameter Conditions Min Typ Max Unit VDD Operating voltage for Flash Write/Erase Refer to operating range of VDD with TA, Section 13.3.1 on page 145 2.4 5.5 V tprog Programming time for 1~32 bytes(1) 1. Up to 32 bytes can be programmed at a time. TA=−40 to +125 °C 5 10 ms Programming time for 4 kbytes TA=+25 °C 0.64 1.28 s tRET Data retention(2) 2. Data based on reliability test results and monitored in production. TA=+55 °C (3) 3. The data retention time increases when the TA decreases. 20 years NRW Write erase cycles TA=+25 °C 10K cycles IDD Supply current(4) 4. Guaranteed by Design. Not tested in production. Read / Write / Erase modes fCPU = 8 MHz, VDD = 5.5 V 2.6 mA No Read/No Write mode 100 µA Power down mode / Halt 00.1 µA Table 84. Data EEPROM memory characteristics Symbol Parameter Conditions Min Typ Max Unit VDD Operating voltage for EEPROM Write/Erase Refer to operating range of VDD with TA, Section 13.3.1 on page 145 2.4 5.5 V tprog Programming time for 1~32 bytes TA=−40 to +125°C 5 10 ms tret Data retention(1) 1. Data based on reliability test results and monitored in production. TA=+55°C (2) 2. The data retention time increases when the TA decreases. 20 years NRW Write erase cycles TA=+25°C 300K cycles |
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