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H8S/2218 数据表(PDF) 630 Page - Renesas Technology Corp |
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H8S/2218 数据表(HTML) 630 Page - Renesas Technology Corp |
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630 / 750 page ![]() Section 17 Flash Memory (F-ZTAT Version) Rev.6.00 Jun. 03, 2008 Page 582 of 698 REJ09B0074-0600 Start Set EBR1 (2) Enable WDT Disable WDT Read verify data Increment address Verify data = all 1s? Last address of block? All erase block erased? Set block start address as verify address H'FF dummy write to verify address Set SWE1 bit in FLMCR1 n = 1 Set ESU1 bit in FLMCR1 Set E1 bit in FLMCR1 Start erasing Halt erasing Wait (x) μs Wait (y) μs Clear E1 bit in FLMCR1 Set EV1 bit in FLMCR1 Wait (z) μs Clear ESU1 bit in FLMCR1 Wait (α) μs Wait ( β) μs Wait ( γ) μs Clear EV1 bit in FLMCR1 n ← n + 1 Wait ( η) μs Clear SWE1 bit in FLMCR1 Wait ( θ) μs Clear EV1 bit in FLMCR1 n ≥ (N)? Wait ( η) μs Clear SWE1 bit in FLMCR1 Wait ( θ) μs Erase failure End of erasing Wait ( ε) μs No Yes Yes No No No Yes Yes *1 *2 *2 *2 *2 *2 *2 *2 *2 *5 *2 *3 *4 Notes: 1. 2. 3. 4. 5. Pre-write (clearing data in the block to be erased to 0) isn not required. x, y, z, α, β, γ, ε, η, θ, and N are shown in section 22.7, Flash Memory Characteristics. Veryfy data is read in 16 bits. Only 1 bit in the EBR register must be set. Two or more bits in EBR cannot be set. Erasure is performed in block units. To erase multiple blocks, each block must be erased sequentially. Figure 17.13 Erase/Erase-Verify Flowchart |
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