| 数据搜索系统,热门电子元器件搜索 |
|
H5GQ1H24AFR-R0C 数据表(PDF) 96 Page - Hynix Semiconductor |
|
|
|||||||||||||||||||||||||||||
H5GQ1H24AFR-R0C 数据表(HTML) 96 Page - Hynix Semiconductor |
|
96 / 173 page ![]() This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsability for use of circuits described. No patent licenses are implied. Rev. 1.0 /Nov. 2009 96 H5GQ1H24AFR Figure 63. Preamble Timing Diagram DBI DO DO DBI n+7 n+7 n n DO DO n+7 n CL = CLmrs = 6 Bank a, Col n Col n CK CK# DQ6 DBI# T0 T1 T4 T5 T5n T6n T6 T7n T8 T9 T10 T7 WCK# DONʹT CARE TRANSITIONING DATA DQ7 WCK ODT Disabled ODT Enabled ODT Enabled ODT 2. WCK and CK are shown aligned (tWCK2CKPIN=0, tWCK2CK=0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK. 4. DQ6, DQ7 and the DBI# pin are shown to illustrate the DQ preamble pattern. RDBI is Enabled (MR1 A8=0). 5. Before the READ commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and tRCDRD must be met. 1. CLmrs = 6 is shown as an example. Actual supported values will be found in the MR and AC timings sections. 3. EDC may be on or off. See Figure 4 for EDC Timing. Notes: 6. tWCK2DQO = 0 is shown for illustration purposes. NOP READ NOP NOP NOP NOP NOP NOP NOP ADDRESS COMMAND ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |