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H5GQ1H24AFR-R0C 数据表(PDF) 107 Page - Hynix Semiconductor |
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H5GQ1H24AFR-R0C 数据表(HTML) 107 Page - Hynix Semiconductor |
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107 / 173 page ![]() This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsability for use of circuits described. No patent licenses are implied. Rev. 1.0 /Nov. 2009 107 H5GQ1H24AFR Figure 72. SELF REFRESH Entry Command Figure 73. Self Refresh Entry and Exit Note: 1. Clock(CK and CK#) must be stable before exiting self refresh mode. 2. Device must be in the all banks idle state prior to entering self refresh mode. 3. tXSNRW is required before any non‐READ or WRITE command can be applied, and tXSRW is required before a READ or WRITE command can be applied. 4. REF = REFRESH command. CS# WE# CAS# RAS# CKE# A9‐A11 (A12) A0,A1,A6 A8 BA0‐BA3 A2‐A5 HIGH Self‐Refresh CK CK# A7 CK# CK CMD DQ SRE NOP ADDR T0 T1 T2 Ta0 Tb2 Tb0 Tb1 Td0 SRX PREA Valid NOP tCPDED CKE# NOP tCKSRE tCKSRX tRP Tc0 Enter Self Refresh Mode Exit Self Refresh Mode tXSNRW tXSRW tRDSRE or tWRSRE Self refresh exit requires WCK2CK training prior to any WRITE or READ operation At least one REFRESH command shall be issued after tXSNRW for output driver and termination impedance updates. NOP Donʹt Care tCMDS |
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