PIC12F675T-ESLASHP datasheet(92/136 Pages) MICROCHIP

92 / 136 page

PIC12F629/675

DS41190G-page 92

 2010 Microchip Technology Inc.

12.5

DC Characteristics: PIC12F629/675-E (Extended)

Standard Operating Conditions (unless otherwise stated)

Operating temperature

-40

C  TA  +125C for extended

Param

No.

Device Characteristics

Min

Typ†

Max

Units

Conditions

VDD

Note

D020E Power-down Base Current

(IPD)

—

0.00099

3.5

A

2.0

WDT, BOD, Comparators, VREF,

and T1OSC disabled

—

0.0012

4.0

A3.0

—

0.0029

8.0

A5.0

D021E

—

0.3

6.0

A

2.0

WDT Current(1)

—1.8

9.0

A3.0

—8.4

A5.0

D022E

—

A

3.0

BOD Current(1)

—

109

130

A5.0

D023E

—

3.3

A

2.0

Comparator Current(1)

—6.1

A3.0

—11.5

A5.0

D024E

—

A2.0

CVREF Current(1)

—85

100

A3.0

—

138

165

A5.0

D025E

—

4.0

A

2.0

T1 OSC Current(1)

—4.6

A3.0

—6.0

A5.0

D026E

—

0.0012

6.0

A

3.0

A/D Current(1)

—

0.0022

8.5

A5.0

† Data in “Typ” column is at 5.0V, 25

C unless otherwise stated. These parameters are for design guidance

only and are not tested.

Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this

peripheral is enabled. The peripheral

 current can be determined by subtracting the base IDD or IPD

current from this limit. Max values should be used when calculating total current consumption.

2: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is

measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.

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