PIC12F675T-ESLASHP datasheet(94/136 Pages) MICROCHIP

94 / 136 page

PIC12F629/675

DS41190G-page 94

 2010 Microchip Technology Inc.

12.7

DC Characteristics: PIC12F629/675-I (Industrial), PIC12F629/675-E (Extended) (Cont.)

DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise stated)

Operating temperature -40°C

 TA  +85°C for industrial

-40°C

 TA  +125°C for extended

Param

No.

Sym

Characteristic

Min

Typ†

Max

Units

Conditions

Capacitive Loading Specs

on Output Pins

D100

COSC2 OSC2 pin

—

15*

In XT, HS and LP modes when

external clock is used to drive

OSC1

D101

CIO

All I/O pins

—

50*

Data EEPROM Memory

D120

Byte Endurance

100K

—

E/W -40

C  TA +85°C

D120A

Byte Endurance

10K

100K

—

E/W +85°C

 TA +125°C

D121

VDRW VDD for Read/Write

VMIN

—

5.5

Using EECON to read/write

VMIN = Minimum operating

voltage

D122

TDEW Erase/Write cycle time

—

D123

TRETD Characteristic Retention

—

Year Provided no other specifications

are violated

D124

TREF

Number of Total Erase/Write

Cycles before Refresh(1)

10M

—

E/W -40

C  TA +85°C

Program Flash Memory

D130

Cell Endurance

10K

100K

—

E/W -40

C  TA +85°C

D130A

Cell Endurance

10K

—

E/W +85°C

 TA +125°C

D131

VPR

VDD for Read

VMIN

—5.5

VMIN = Minimum operating

voltage

D132

VPEW VDD for Erase/Write

4.5

—

5.5

D133

TPEW

Erase/Write cycle time

—

2.5

D134

TRETD Characteristic Retention

—

Year Provided no other specifications

are violated

* These parameters are characterized but not tested.

† Data in “Typ” column is at 5.0V, 25

C unless otherwise stated. These parameters are for design guidance

only and are not tested.

Note 1: See Section 8.5.1 “Using the Data EEPROM” for additional information.

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