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430 数据表(PDF) 67 Page - Intel Corporation |
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430 数据表(HTML) 67 Page - Intel Corporation |
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67 / 71 page  Datasheet 67 Thermal Specifications and Design Considerations 5. The series resistance, RT, is provided to allow for a more accurate measurement of the junction temperature. RT, as defined, includes the lands of the processor but does not include any socket resistance or board trace resistance between the socket and the external remote diode thermal sensor. RT can be used by remote diode thermal sensors with automatic series resistance cancellation to calibrate out this error term. Another application is that a temperature offset can be manually calculated and programmed into an offset register in the remote diode thermal sensors as exemplified by the equation: Terror = [RT * (N-1) * IFWmin] / [nk/q * ln N] where Terror = sensor temperature error, N = sensor current ratio, k = Boltzmann Constant, q = electronic charge. NOTES: 1. Intel does not support or recommend operation of the thermal diode under reverse bias. 2. Same as IFW in Table 19 3. Characterized across a temperature range of 50 - 100 °C. 4. Not 100% tested. Specified by design characterization. 5. The ideality factor, nQ, represents the deviation from ideal transistor model behavior as exemplified by the equation for the collector current: IC = IS * (e qV BE /n Q kT –1) Where IS = saturation current, q = electronic charge, VBE = voltage across the transistor base emitter junction (same nodes as VD), k = Boltzmann Constant, and T = absolute temperature (Kelvin). 6. The series resistance, RT, provided in the Diode Model Table (Table 19) can be used for more accurate readings as needed. When calculating a temperature based on thermal diode measurements, a number of parameters must be either measured or assumed. Most devices measure the diode ideality and assume a series resistance and ideality trim value, although some are capable of also measuring the series resistance. Calculating the temperature is then accomplished using the equations listed under Table 19. In most temperature sensing devices, an expected value for the diode ideality is designed-in to the temperature calculation equation. If the designer of the temperature sensing device assumes a perfect diode the ideality value (also called ntrim) will be 1.000. Given that most diodes are not perfect, the designers usually select an ntrim value that more closely matches the behavior of the diodes in the processor. If the processors diode ideality deviates from that of ntrim, each calculated temperature will be offset by a fixed amount. This temperature offset can be calculated with the equation: Terror(nf) = Tmeasured X (1 - nactual/ntrim) Where Terror(nf) is the offset in degrees C, Tmeasured is in Kelvin, nactual is the measured ideality of the diode, and ntrim is the diode ideality assumed by the temperature sensing device. Table 20. Thermal Diode Parameters using Transistor Mode Symbol Parameter Min Typ Max Unit Notes IFW Forward Bias Current 5- 200 µA 1, 2 IE Emitter Current 5 200 µA nQ Transistor Ideality 0.997 1.001 1.005 - 3, 4, 5 Beta 0.3 0.760 3, 4 R T Series Resistance 2.79 4.52 6.24 Ω 3, 6 |
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