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430 数据表(PDF) 29 Page - Intel Corporation

部件名 430
功能描述  Celeron M Processor on 65 nm Process
PDF  71 Pages
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制造商  INTEL [Intel Corporation]
网页  http://www.intel.com
标志 INTEL - Intel Corporation

430 数据表(HTML) 29 Page - Intel Corporation

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Datasheet
29
Electrical Specifications
NOTES:
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2.
Crossing Voltage is defined as absolute voltage where rising edge of BCLK0 is equal to the falling edge of
BCLK1.
3.
Threshold Region is defined as a region entered about the crossing voltage in which the differential receiver
switches. It includes input threshold hysteresis.
4.
For Vin between 0 V and VIH.
5.
Cpad includes die capacitance only. No package parasitics are included.
6.
ΔV
CROSS is defined as the total variation of all crossing voltages as defined in note 2.
NOTES:
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2.
VIL is defined as the maximum voltage level at a receiving agent that will be interpreted as a logical low
value.
3.
VIH is defined as the minimum voltage level at a receiving agent that will be interpreted as a logical high
value.
4.
VIH and VOH may experience excursions above VCCP. However, input signal drivers must comply with the
signal quality specifications.
5.
This is the pull down driver resistance. Refer to processor I/O Buffer Models for I/V characteristics.
Measured at 0.31*VCCP. RON (min) = 0.38*RTT, RON (typ) = 0.45*RTT, RON (max) = 0.52*R
TT
.
6.
GTLREF should be generated from VCCP with a 1% tolerance resistor divider. Tolerance of resistor divider
decides the tolerance of GTLREF. The VCCP referred to in these specifications is the instantaneous VCCP.
7.
RTT is the on-die termination resistance measured at VOL of the AGTL+ output driver. Measured at
0.31*VCCP. RTT is connected to VCCP on die. Refer to processor I/O buffer models for I/V characteristics.
8.
Specified with on die RTT and RON are turned off.
9.
Cpad includes die capacitance only. No package parasitics are included.
10.
This spec applies to all AGTL+ signals except for PREQ#. RTT for PREQ# is between 1.5 kΩ to 6.0 kΩ.
Table 8.
FSB Differential BCLK Specifications
Symbol
Parameter
Min
Typ
Max
Unit
Notes1
VIL
Input Low Voltage
0
V
VIH
Input High Voltage
0.660
0.710
0.85
V
V
CROSS
Crossing Voltage
0.25
0.35
0.55
V
2
ΔV
CROSS
Range of Crossing Points
0.14
V
6
VTH
Threshold Region
VCROSS -0.100
VCROSS+0.100
V
3
ILI
Input Leakage Current
±100
µA
4
Cpad
Pad Capacitance
0.95
1.2
1.45
pF
5
Table 9.
AGTL+ Signal Group DC Specifications
Symbol
Parameter
Min
Typ
Max
Unit
Notes1
VCCP
I/O Voltage
0.997
1.05
1.102
V
GTLREF
Reference Voltage
2/3 VCCP
V6
VIH
Input High Voltage
GTLREF+0.1
VCCP+0.1
V
3,6
VIL
Input Low Voltage
-0.1
0
GTLREF-0.1
V
2,4
VOH
Output High Voltage
VCCP
6
RTT
Termination Resistance
50
55
61
Ω
7,10
RON
Buffer on Resistance
22.3
25.5
28.7
Ω
5
ILI
Input Leakage Current
±100
µA
8
Cpad1
Pad Capacitance
1.8
2.3
2.75
pF
9



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