430 datasheet(30/71 Pages) INTEL

30 / 71 page

Electrical Specifications

Datasheet

NOTES:

Unless otherwise noted, all specifications in this table apply to all processor frequencies.

The VCCP referred to in these specifications refers to instantaneous VCCP.

Refer to the processor I/O Buffer Models for I/V characteristics.

Measured at 0.1*VCCP.

Measured at 0.9*VCCP.

For Vin between 0 V and VCCP. Measured when the driver is tristated.

Cpad1 includes die capacitance only for DPSLP#,PWRGOOD. No package parasitics are included.

Cpad2 includes die capacitance for all other CMOS input signals. No package parasitics are included.

NOTES:

Unless otherwise noted, all specifications in this table apply to all processor frequencies.

Measured at 0.2*VCCP.

VOH is determined by value of the external pull-up resistor to VCCP. Please contact your Intel representative

for details.

For Vin between 0 V and VOH.

Cpad includes die capacitance only. No package parasitics are included.

Table 10.

CMOS Signal Group DC Specifications

Symbol

Parameter

Min

Typ

Max

Unit

Notes1

VCCP

I/O Voltage

1.0

1.05

1.10

VIL

Input Low Voltage - CMOS

-0.1

0.0

0.33

2, 3

VIH

Input High Voltage

0.7

1.05

1.20

VOL

Output Low Voltage

-0.1

0.11

VOH

Output High Voltage

0.9

VCCP

1.20

IOL

Output Low Current

1.3

4.1

IOH

Output High Current

1.3

4.1

ILI

Input Leakage Current

±100

µA

Cpad1

Pad Capacitance

1.8

2.3

2.75

Cpad2

Pad Capacitance for CMOS Input

0.95

1.2

1.45

Table 11.

Open Drain Signal Group DC Specifications

Symbol

Parameter

Min

Typ

Max

Unit

Notes1

VOH

Output High Voltage

1.0

1.05

1.10

VOL

Output Low Voltage

0.20

IOL

Output Low Current

11.40

ILeak

Output Leakage Current

±200

µA

Cpad

Pad Capacitance

1.8

2.3

2.75

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