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L6717ATR 数据表(PDF) 53 Page - STMicroelectronics

部件名 L6717ATR
功能描述  Dynamic phase management
PDF  57 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

L6717ATR 数据表(HTML) 53 Page - STMicroelectronics

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L6717A
Layout guidelines
13
Layout guidelines
Layout is one of the most important things to consider when designing high current
applications. A good layout solution can generate a benefit in lowering power dissipation on
the power paths, reducing radiation and a proper connection between signal and power
ground can optimize the performance of the control loops.
Two kind of critical components and connections have to be considered when laying-out a
VRM based on L6717A: power components and connections and small signal components
connections.
13.1
Power components and connections
These are the components and connections where switching and high continuous current
flows from the input to the load. The first priority when placing components has to be
reserved to this power section, minimizing the length of each connection and loop as much
as possible. To minimize noise and voltage spikes (EMI and losses) these interconnections
must be a part of a power plane and anyway realized by wide and thick copper traces: loop
must be anyway minimized. The critical components, i.e. the power transistors, must be
close one to the other. The use of multi-layer printed circuit board is recommended.
Traces between the driver section and the MOSFETs should be wide to minimize the
inductance of the trace so minimizing ringing in the driving signals. Moreover, VIAs count
needs to be minimized to reduce the related parasitic effect.
Locate the bypass capacitor (VCC, VCCDR and BOOT capacitors) close to the device with
the shortest possible loop and use wide copper traces to minimize parasitic inductance.
Systems that do not use Schottky diodes in parallel to the low-side MOSFET might show big
negative spikes on the phase pin. This spike can be limited as well as the positive spike but
it causes the bootstrap capacitor to be over-charged. This extra-charge can cause, in the
worst case condition of maximum input voltage and during particular transients, that boot-to-
phase voltage overcomes the abs.max.ratings also causing device failures. It is then
suggested in this cases to limit this extra-charge by adding a small resistor R
BOOT
in series
to the boot capacitor or the boot diode. The use of R
BOOT
also contributes in the limitation of
the spike present on the BOOT pin.
Figure 20. Driver turn-on and turn-off paths
For heat dissipation, place copper area under the IC. This copper area must be connected
with internal copper layers through several VIAs to improve the thermal conductivity. The
RGATE
RINT
CGD
CGS
CDS
VCCDR
LSx DRIVER
LS MOSFET
GND (PAD)
LGATEx
RGATE
RINT
CGD
CGS
CDS
BOOTx
HSx DRIVER
HS MOSFET
PHASEx
HGATEx



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