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L6717ATR 数据表(PDF) 53 Page - STMicroelectronics |
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L6717ATR 数据表(HTML) 53 Page - STMicroelectronics |
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53 / 57 page ![]() DocID024465 Rev 1 53/57 L6717A Layout guidelines 13 Layout guidelines Layout is one of the most important things to consider when designing high current applications. A good layout solution can generate a benefit in lowering power dissipation on the power paths, reducing radiation and a proper connection between signal and power ground can optimize the performance of the control loops. Two kind of critical components and connections have to be considered when laying-out a VRM based on L6717A: power components and connections and small signal components connections. 13.1 Power components and connections These are the components and connections where switching and high continuous current flows from the input to the load. The first priority when placing components has to be reserved to this power section, minimizing the length of each connection and loop as much as possible. To minimize noise and voltage spikes (EMI and losses) these interconnections must be a part of a power plane and anyway realized by wide and thick copper traces: loop must be anyway minimized. The critical components, i.e. the power transistors, must be close one to the other. The use of multi-layer printed circuit board is recommended. Traces between the driver section and the MOSFETs should be wide to minimize the inductance of the trace so minimizing ringing in the driving signals. Moreover, VIAs count needs to be minimized to reduce the related parasitic effect. Locate the bypass capacitor (VCC, VCCDR and BOOT capacitors) close to the device with the shortest possible loop and use wide copper traces to minimize parasitic inductance. Systems that do not use Schottky diodes in parallel to the low-side MOSFET might show big negative spikes on the phase pin. This spike can be limited as well as the positive spike but it causes the bootstrap capacitor to be over-charged. This extra-charge can cause, in the worst case condition of maximum input voltage and during particular transients, that boot-to- phase voltage overcomes the abs.max.ratings also causing device failures. It is then suggested in this cases to limit this extra-charge by adding a small resistor R BOOT in series to the boot capacitor or the boot diode. The use of R BOOT also contributes in the limitation of the spike present on the BOOT pin. Figure 20. Driver turn-on and turn-off paths For heat dissipation, place copper area under the IC. This copper area must be connected with internal copper layers through several VIAs to improve the thermal conductivity. The RGATE RINT CGD CGS CDS VCCDR LSx DRIVER LS MOSFET GND (PAD) LGATEx RGATE RINT CGD CGS CDS BOOTx HSx DRIVER HS MOSFET PHASEx HGATEx |
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