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L6717ATR 数据表(PDF) 43 Page - STMicroelectronics |
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L6717ATR 数据表(HTML) 43 Page - STMicroelectronics |
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43 / 57 page ![]() DocID024465 Rev 1 43/57 L6717A Output voltage monitoring and protections When the voltage sensed by VSEN and/or NB_VSEN overcomes the OV threshold, the controller: – Permanently sets the PWM of the involved section to zero keeping ENDRV of that section high in order to keep all the Low-Side MOSFETs on to protect the load of the Section in OV condition. – Permanently sets the PWM of the non-involved section to HiZ while keeping ENDRV of the non-involved section low in order to realize an HiZ condition of the non-involved section. – Drives the OSC/ FLT pin high. – Power supply or EN pin cycling is required to restart operations. Filter OVP pin with 100 pF(typ) to SGND. 8.2 Feedback disconnection L6717A provides both CORE and NB sections with FB disconnection protection. This feature acts in order to stop the device from regulating dangerous voltages in case the remote sense connections are left floating. The protection is available for both the sections and operates for both the positive and negative sense. According to Figure 14, the protection works as follow: • CORE section: Positive sense is performed monitoring the CORE output voltage through both VSEN and CS1N. As soon as CS1N is more than 600 mV higher than VSEN, the device latches in HiZ. FLT pin is driven high. A 50 μA pull-down current on the VSEN forces the device to detect this fault condition. Negative sense is performed monitoring the internal opamp used to recover the GND losses by comparing its output and the internal reference generated by the DAC. As soon as the difference between the output and the input of this opamp is higher than 500 mV, the device latches in HiZ. FLT pin is driven high. • NB section (SVI only) Positive sense is performed monitoring the NB output voltage through both NB_VSEN and NB_CSN. As soon as NB_CSN is more than 600 mV higher than NB_VSEN, the device latches in HiZ. FLT pin is driven high. A 50 μA pull-down current on the NB_VSEN forces the device to detect this fault condition. Negative sense is performed monitoring the internal opamp used to recover the GND losses by comparing its output and the internal reference generated by the DAC. As soon as the difference between the output and the input of this opamp is higher than 500 mV, the device latches in HiZ. FLT pin is driven high. To recover from a latch condition, cycle VCC or EN. |
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