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EDBA164B4PR-1DATF-R 数据表(PDF) 110 Page - Micron Technology

部件名 EDBA164B4PR-1DATF-R
功能描述  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

EDBA164B4PR-1DATF-R 数据表(HTML) 110 Page - Micron Technology

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Input Signal
Figure 70: LPDDR2-466 to LPDDR2-1066 Input Signal
0.380V
0.000V
0.470V
0.576V
0.588V
0.600V
0.612V
0.624V
0.730V
0.820V
V
IL(AC)
V
IL(DC)
V
REF - AC noise
V
REF - DC error
V
REF + DC error
V
REF + AC noise
V
IH(DC)
V
IH(AC)
1.200V
1.550V
–0.350V
V
DD
V
DD + 0.35V
narrow pulse width
V
SS - 0.35V
narrow pulse width
V
SS
0.380V
0.470V
0.576V
0.588V
0.600V
0.612V
0.624V
0.730V
0.820V
Minimum V
IL and VIH levels
V
IH(DC)
V
IH(AC)
V
IL(AC)
V
IL(DC)
V
IL and VIH levels with ringback
Notes:
1. Numbers reflect typical values.
2. For CA[9:0], CK_t, CK_c, and CS_n VDD stands for VDD2. For DQ, DM, DQS_t, and DQS_c,
VDD stands for VDDQ.
3. For CA[9:0], CK_t, CK_c, and CS_n are VSS . For DQ, DM, DQS_t, and DQS_c, VSS stands for
VSSQ.
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
AC and DC Logic Input Measurement Levels for Single-Ended
Signals
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
110
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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