H8SSLASH2218 datasheet(609/750 Pages) RENESAS

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Section 17 Flash Memory (F-ZTAT Version)

Rev.6.00 Jun. 03, 2008 Page 561 of 698

REJ09B0074-0600

17.5.1

Flash Memory Control Register 1 (FLMCR1)

FLMCR1 is a register that makes the flash memory transit to program mode, program-verify

mode, erase mode, or erase-verify mode. For details on register setting, refer to section 17.8, Flash

Memory Programming/Erasing.

Bit

Bit Name Initial Value

R/W

Description

FWE

—*

Flash Write Enable

Reflects the input level at the FWE pin. It is set to 1

when a low level is input to the FWE pin, and cleared to

0 when a high level is input.

SWE1

R/W

Software Write Enable

When this bit is set to 1, flash memory

programming/erasing is enabled. When this bit is

cleared to 0, other FLMCR1 register bits and all EBR1,

EBR2 bits cannot be set.

[Setting condition]

When FWE = 1

ESU1

R/W

Erase Setup

When this bit is set to 1, the flash memory transits to the

erase setup state. When it is cleared to 0, the erase

setup state is cancelled. Set this bit to 1 before setting

the E1 bit in FLMCR1.

[Setting condition]

When FWE = 1 and SWE1 = 1

PSU1

R/W

Program Setup

When this bit is set to 1, the flash memory transits to the

program setup state. When it is cleared to 0, the

program setup state is cancelled. Set this bit to 1 before

setting the P1 bit in FLMCR1.

[Setting condition]

When FWE = 1 and SWE1 = 1

EV1

R/W

Erase-Verify

When this bit is set to 1, the flash memory transits to

erase-verify mode. When it is cleared to 0, erase-verify

mode is cancelled.

[Setting condition]

When FWE = 1 and SWE1 = 1

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