H8SSLASH2225 datasheet(45/1071 Pages) RENESAS

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Rev. 5.00 Aug 08, 2006 page xlv of lxxxvi

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27.3.6 Flash Memory

Characteristics

Table 27.25 Flash Memory

Characteristics

886

Notes 6 and 7 amended, note 8 added

Notes: 6. The minimum times that all characteristics after

rewriting are guaranteed. (A range between 1 and minimum

value is guaranteed.)

7. The reference value at 25°C. (Normally, it is a reference

that rewriting is enabled up to this value.)

8. Data hold characteristics when rewriting is performed

within the range of specifications including minimum value.

27.4 Electrical

Characteristics of H8S/2238B

and H8S/2236B

887

Section 27.4 title amended

27.4.2 DC Characteristics

Table 27.27 DC

Characteristics (1)

889

Note 2 amended

Note: 2. In order to output high level, a pull-up resistance

must be connected externally.

27.4.6 Flash Memory

Characteristics

Table 27.37 Flash Memory

Characteristics

905

Table 27.37 amended

Item

Symbol

Min

Typ

Max

Unit

Test

Conditions

Programming time*

1*2*4



200

ms/

128 bytes

Erase time*

1*3*5



100

1200

ms/block

Rewrite times

NWEC

100*

10000*



Times

Data holding time*

tDRP



Years

906

Notes 6 and 7 amended, note 8 added

Notes: 6. The minimum times that all characteristics after

rewriting are guaranteed. (A range between 1 and minimum

value is guaranteed.)

7. The reference value at 25°C. (Normally, it is a reference

that rewriting is enabled up to this value.)

8. Data hold characteristics when rewriting is performed

within the range of specifications including minimum value.

924

Table 27.48 amended

Absolute accuracy*

27.5.5 D/A Conversion

Characteristics

Table 27.48 D/A Conversion

Characteristics

Note * added

Note: * Does not apply in module stop mode, software

standby mode, watch mode, subactive mode, or subsleep

mode.

27.5.6 Flash Memory

Characteristics

Table 27.49 Flash Memory

Characteristics

925

Table 27.49 amended

Item

Symbol

Min

Typ

Max

Unit

Test

Conditions

Programming time*

1*2*4



200

ms/128 bytes

Erase time*

1*3*5



100

1200

ms/block

Reprogramming count

NWEC

100

10000*



Times

Data holding time

tDRP



year

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