H8SSLASH2225 datasheet(46/1071 Pages) RENESAS

46 / 1071 page

Rev. 5.00 Aug 08, 2006 page xlvi of lxxxvi

Item

Page

Revision (See Manual for Details)

27.5.6 Flash Memory

Characteristics

Table 27.49 Flash Memory

Characteristics

926

Notes 6 and 7 amended, note 8 added

Notes: 6. The minimum times that all characteristics after

rewriting are guaranteed. (A range between 1 and minimum

value is guaranteed.)

7. The reference value at 25°C. (Normally, it is a reference

that rewriting is enabled up to this value.)

8. Data hold characteristics when rewriting is performed

within the range of specifications including minimum value.

27.6.2 DC Characteristics

Table 27.52 Permissible

Output Currents

936

Table 27.52 amended

Conditions (ZTAT version and F-ZTAT version):

945

Table 27.58 amended

Absolute accuracy*

27.6.5 D/A Conversion

Characteristics

Table 27.58 D/A Conversion

Characteristics

Note: * Does not apply in module stop mode, software

standby mode, watch mode, subactive mode, or subsleep

mode.

27.6.6 Flash Memory

Characteristics

Table 27.59 Flash Memory

Characteristics

946

Table 27.59 amended

Item

Symbol Min

Typ

Max

Unit

Test

Conditions

Programming time*

1*2*4



200

ms/128 bytes

Erase time*

1*3*5



100

1200

ms/block

Reprogramming count

NWEC

100*

10000*



Times

Data holding time*

tDRP



year

947

Notes 6 and 7 amended, note 8 added

Notes: 6. The minimum times that all characteristics after

rewriting are guaranteed. (A range between 1 and minimum

value is guaranteed.)

7. The reference value at 25°C. (Normally, it is a reference

that rewriting is enabled up to this value.)

8. Data hold characteristics when rewriting is performed

within the range of specifications including minimum value.

A.1 I/O Port State in Each

Pin State

967

Note 2 amended

Note: 2. Not available in the H8S/2237 Group and

H8S/2227 Group.

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