H8SSLASH2225 datasheet(811/1071 Pages) RENESAS

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Section 20 Flash Memory (F-ZTAT Version)

Rev. 5.00 Aug 08, 2006 page 725 of 982

REJ09B0054-0500

20.5.1

Flash Memory Control Register 1 (FLMCR1)

FLMCR1 is a register that makes the flash memory change to program mode, program-verify

mode, erase mode, or erase-verify mode. For details on register setting, refer to section 20.8, Flash

Memory Programming/Erasing.

Bit

Bit Name Initial Value R/W

Description

FWE

—

Flash Write Enable Bit

Reflects the input level at the FWE pin. It is set to 1 when

a low level is input to the FWE pin, and cleared to 0 when

a high level is input. When this bit is cleared to 0, the

flash memory changes to hardware protect mode.

SWE1

R/W

Software Write Enable Bit

When this bit is set to 1, flash memory

programming/erasing is enabled. When this bit is cleared

to 0, bits 5 to 0 in FLMCR1 register and all EBR1 and

EBR2 bits cannot be set.

[Setting condition]

When FWE = 1

ESU1

R/W

Erase Setup Bit

When this bit is set to 1, the flash memory changes to the

erase setup state. When it is cleared to 0, the erase

setup state is cancelled. Set this bit to 1 before setting

the E1 bit in FLMCR1.

[Setting condition]

When FWE = 1 and SWE1 = 1

PSU1

R/W

Program Setup Bit

When this bit is set to 1, the flash memory changes to the

program setup state. When it is cleared to 0, the program

setup state is cancelled. Set this bit to 1 before setting

the P1 bit in FLMCR1.

[Setting condition]

When FWE = 1 and SWE1 = 1

EV1

R/W

Erase-Verify

When this bit is set to 1, the flash memory changes to

erase-verify mode. When it is cleared to 0, erase-verify

mode is cancelled.

[Setting condition]

When FWE = 1 and SWE1 = 1

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