H8SSLASH2225 datasheet(949/1071 Pages) RENESAS

949 / 1071 page

Section 27 Electrical Characteristics

Rev. 5.00 Aug 08, 2006 page 863 of 982

REJ09B0054-0500

Notes: 1. Follow the program/erase algorithms when making the time settings.

2. Programming time per 128 bytes (Shows the total period for which the P1 bit in the

flash memory control register 1 (FLMCR1) is set. It does not include the program

verification time.)

3. Erase block time (Shows the total period for which the E1 bit in FLMCR1 is set. It does

not include the erase verification time.)

4. Maximum programming time

tp (max) = Wait time after P1 bit setting (tsp)

× Maximum programming count (N)

(tsp30

+ tsp10) × 6 + (tsp200) × 994

5. For the maximum erase time (tE(max)), the following relationship applies between the

wait time after E1 bit setting (z) and the maximum erase count (N):

tE(max) = Wait time after E1 bit setting (tse)

× Maximum erase count (N)

6. The minimum times that all characteristics after reprogramming are guaranteed. (The

range between 1 and a minimum value is guaranteed.)

7. Reference value at 25

°C. (Normally, it is a reference that rewriting is enabled up to this

value.)

8. Data hold characteristics are when reprogramming is performed within the range of

specifications including a minimum value.

H8S/2225 数据表(PDF) 949 Page - Renesas Technology Corp