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H8S/2225 数据表(PDF) 975 Page - Renesas Technology Corp |
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H8S/2225 数据表(HTML) 975 Page - Renesas Technology Corp |
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975 / 1071 page ![]() Section 27 Electrical Characteristics Rev. 5.00 Aug 08, 2006 page 889 of 982 REJ09B0054-0500 Item Symbol Min Typ Max Unit Test Conditions VOL 0.4 V IOL = 0.4 mA Output low voltage All output pins* 3 0.4 V IOL = 0.8 mA RES | Iin | 1.0 µA Input leakage current STBY, NMI, MD2 to MD0, FWE 1.0 µA Vin = 0.5 to VCC – 0.5 V Ports 4, 9 1.0 µA Vin = 0.5 to AVCC – 0.5 V Three-state leakage current (off state) Ports 1, 3, 7, A to G | ITSI | 1.0 µA Vin = 0.5 to VCC – 0.5 V Input pull-up MOS current Ports A to E –IP 10 300 µA Vin = 0 V Notes: 1. If the A/D and D/A converters are not used, do not leave the AVCC, Vref , and AVSS pins open. Apply a voltage between 2.0 V and 5.5 V to the AVCC and Vref pins by connecting them to VCC, for instance. Set Vref ≤ AVCC. 2. P35/SCK1/SCL0 and P34/SDA0 are NMOS push-pull outputs. In order to output a high level from SCL0 and SDA0 (ICE = 1), a pull-up resistance must be connected externally. The high level of P35/SCK1 and P34 (ICE = 0) is driven by NMOS. In order to output a high level, a pull-up resistance must be connected externally. 3. This is the case when IICE = 0 and ICE = 0. Low-level output when the bus drive function is selected will be determined in table 27.29. |
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