STLUX385ATR datasheet(83/99 Pages) STMICROELECTRONICS

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STLUX385A

Electrical characteristics

10.3.5

Memory characteristics

Flash program and memory/data E2PROM memory

General conditions: T

= -40 °C to 105 °C.

10.3.6

I/O port pin characteristics

Subject to general operating conditions for V

and T

unless otherwise specified. Unused

input pins should not be left floating.

Data based on characterization results, not tested in production.

PLL maximum input frequency 16 MHz.

Table 46. Flash program memory/data E2PROM memory

Symbol

Parameter

Conditions

Min.(1)

Data based on characterization results, not tested in production.

Typ.

Max.

Unit

PROG

Standard programming time

66.6

(including erase) for

byte/word/block

(1 byte/4 bytes/128 bytes)

Fast programming time for 1

block (128 bytes)

33.3

ERASE

Erase time for 1 block (128

bytes)

33.3

Erase/write cycles

(2)

(program

memory)

The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a

write/erase operation addresses a single byte.

= 25 °C

10 K

Cycles

Erase/write cycles

(2)

(data

memory)

= 85 °C

100 K

= 105 °C

35 K

RET

Data retention (program

memory) after 10 K erase/write

cycles at T

= 25 °C

RET

= 85 °C

Years

Data retention (program

memory) after 10 K erase/write

cycles at T

= 25 °C

RET

= 105 °C

Data retention (data memory)

after 100 K erase/write cycles at

= 85 °C

RET

= 85 °C

Data retention (data memory)

after 35 K erase/write cycles at

= 105 °C

RET

= 105 °C

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