AN2014 datasheet(20/65 Pages) STMICROELECTRONICS

部件名	AN2014

功能描述	How a designer can make the most of STMicroelectronics serial EEPROMs

PDF	65 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

20 / 65 page

Recommendations to improve EEPROM reliability

AN2014

20/65

DocID10701 Rev 10

Figure 12. Latchup mechanism and protection

1. Protection is only recommended if latchup risk is identified.

3.2.3

ST EEPROM latchup protection

During the qualification process, samples from three different lots are tested for voltage

overshoots (positive and negative injections). Figure 13 shows the levels of stress applied to

the tested devices.

Figure 13. Latchup test conditions

1. The device does not latch up within the gray areas.

3.3

Power supply considerations

The power supply also has a major impact on the operating reliability of the EEPROM

device.

Ai11084b

SCR is switched on by an external

stress coming from an I/O pin.

VCC

VSS

Latch up risk minimized

RP<50Ω

RP<1KΩ

SRC

VSS

VCC

I/O

EEPROM

I or V stress

SRC

I/O

High current(often destructive)

Fail

ai10858

Fail

Current Injection

100mA

100mA

Good = Class A

0.5 x V

CCmax

1.5 x VCCmax

Overvoltage

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