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AN2014 数据表(PDF) 43 Page - STMicroelectronics

部件名 AN2014
功能描述  How a designer can make the most of STMicroelectronics serial EEPROMs
PDF  65 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

AN2014 数据表(HTML) 43 Page - STMicroelectronics

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AN2014
Software considerations
64
5.4
Data integrity
In several applications, the implementation of a data integrity strategy is mandatory. Several
strategies are possible, but whatever the solution used, extra memory density is required to
hold the extra data.
5.4.1
The checksum
It is perhaps the more commonly used method to prevent data loss, data corruption and
poor communication. It consists in computing a checksum of the data to write and in storing
it into the memory array as an additional data byte. Checksums are particularly suitable for
the secure communication of parameters that are often read and updated.
To give applications more robustness, more elaborated checksum routines like Error Code
Correction can also be used to correct detected errors.
5.4.2
Data redundancy
Data redundancy is also a good way of preventing data loss and data corruption. Data
redundancy is more particularly adapted to the read-only data stored in the EEPROM.
Typically, this kind of data is programmed once during module manufacturing and then only
read during the whole application lifetime. As the data is never refreshed, there is a higher
probability of facing a retention loss. With redundancy, there is a backup on each read-only
byte.
The efficiency of redundancy depends on the physical structure of the memory. As
described previously, the memory array is organized as rows (or pages) and columns where
each byte location (address) is the intersection of a row and a column. Redundant data
should not share the same row (or page) and column (byte location inside one page) but
should be located at physically independent addresses (see Figure 38).
The following rules should be kept in mind by the designer:
The redundant data should not be located in the same page as the reference data
page.
The address of the duplicated data should differ from original address by at least 1 bit
in the column address and 1 bit in the page address (see Table 9: Column and page
address bits according to page length).
Note:
More detailed information on memory array, data scrambling and address decoding are
available on request.
Table 9. Column and page address bits according to page length
Page length
Column address bits
Page address bits
Page of 16 bytes
4 LSB bits
All other MSB bits
Page of 32 bytes
5 LSB bits
All other MSB bits
Page of 64 bytes
6 LSB bits
All other MSB bits
Page of 128 bytes
7 LSB bits
All other MSB bits



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