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TAS2553 数据表(PDF) 48 Page - Texas Instruments |
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TAS2553 数据表(HTML) 48 Page - Texas Instruments |
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48 / 58 page ![]() TAS2553 SLAS978B – SEPTEMBER 2013 – REVISED FEBRUARY 2014 www.ti.com 10 Layout 10.1 Layout Guidelines • Place the boost inductor between VBAT and SW close to device terminals with no VIAS between the device terminals and the inductor. • Place the capacitor between VREG and VBOOST close to device terminals with no VIAS between the device terminals and capacitor. • Place the capacitor between VBOOST/PVDD and GND close to device terminals with no VIAS between the device terminals and capacitor. • Do not use VIAS for traces that carry high current. These include the traces for VBOOST, SW, PVDD and the speaker OUT+, OUT-. • Use epoxy filled vias for the interior pads. • Connect VSENSE+, VSENSE- as close as possible to the speaker. – VSENSE+, VSENSE- should be connected between the EMI ferrite and the speaker if EMI ferrites are used on OUT+, OUT-. – VSENSE+, VSENSE- should be connected between the EMI ferrite and the EMI capacitor if EMI capacitors are used. EMI ferrites must be used if EMI capacitors are used on OUT+, OUT-. • If the analog inputs, IN+ and IN-, are: – used, analog input traces should be routed symmetrically for true differential performance. – used, do not run analog input traces parallel to digital lines. – used, they should be ac coupled. – not used, they should be shorted together. • Use a ground plane with multiple vias for each terminal to create a low-impedance connection to GND for minimum ground noise. • Use supply decoupling capacitors as shown in Figure 51 and Figure 56 and described in Power Supply Recommendations. • Place EMI ferrites, if used, close to the device. 48 Submit Documentation Feedback Copyright © 2013–2014, Texas Instruments Incorporated Product Folder Links: TAS2553 |
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