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ST7LITEUS5 数据表(PDF) 104 Page - STMicroelectronics

部件名 ST7LITEUS5
功能描述  Interrupt management
PDF  136 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ST7LITEUS5 数据表(HTML) 104 Page - STMicroelectronics

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Obsolete
Product(s)
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Obsolete
Product(s)
- Obsolete
Product(s)
Electrical characteristics
ST7LITEUS2, ST7LITEUS5
104/136
12.6
Memory characteristics
TA = -40 to 125 °C, unless otherwise specified;
Table 57.
RAM and Hardware registers
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode 1)
Halt mode (or Reset)
1.6
V
Table 58.
Flash Program memory
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage for Flash
write/erase
2.4(1)
1.
Minimum VDD supply voltage without losing data stored in RAM (in Halt mode or under reset) or in
hardware registers (only in Halt mode). Guaranteed by construction, not tested in production.
5.5
V
tprog
Programming time for 1~32
bytes(2)
2.
Up to 32 bytes can be programmed at a time.
TA=−40 to +125°C
5
10
ms
Programming time for 1 kByte
TA=+25°C
0.16
0.32
s
tRET
Data retention(3)
3.
Data based on reliability test results and monitored in production.
TA=+55°C
(4)
4.
The data retention time increases when the TA decreases.
20
years
NRW
Write erase cycles
TA=+25°C
10k(5)
5.
Design target value pending full product characterization.
cycles
IDD
Supply current(6)
6.
Guaranteed by Design. Not tested in production.
Read / Write / Erase
modes, fCPU = 8 MHz,
VDD = 5.5 V
2.6
mA
No Read/No Write
Mode
100
μA
Power down mode /
Halt
00.1
μA
Obsolete
Product(s)
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