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EDBA164B4PR-1DATF-R 数据表(PDF) 135 Page - Micron Technology

部件名 EDBA164B4PR-1DATF-R
功能描述  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

EDBA164B4PR-1DATF-R 数据表(HTML) 135 Page - Micron Technology

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Table 91: AC Timing (Continued)
Notes 1–2 apply to all parameters and conditions. AC timing parameters must satisfy the tCK minimum conditions (in mul-
tiples of tCK) as well as the timing specifications when values for both are indicated.
Parameter
Symbol
Min/
Max
tCK
Min
Data Rate
Unit Notes
1066
933
800
667
533
400
333
Mode Register Parameters
MODE REGISTER WRITE
command period
tMRW
MIN
5
5
5
5
5
5
5
5
tCK
(avg)
MODE REGISTER READ
command period
tMRR
MIN
2
2
2
2
2
2
2
2
tCK
(avg)
Core Parameters15
READ latency
RL
MIN
3
8
7
6
5
4
3
3
tCK
(avg)
WRITE latency
WL
MIN
1
4
4
3
2
2
1
1
tCK
(avg)
ACTIVATE-to-ACTIVATE
command period
tRC
MIN
tRAS + tRPab (with all-bank precharge),
tRAS + tRPpb (with per-bank precharge)
ns
17
CKE minimum pulse width during
SELF REFRESH (low pulse width
during SELF REFRESH)
tCKESR
MIN
3
15
15
15
15
15
15
15
ns
SELF REFRESH exit to next valid
command delay
tXSR
MIN
2
tRFCab + 10
ns
Exit power-down to next valid
command delay
tXP
MIN
2
7.5
7.5
7.5
7.5
7.5
7.5
7.5
ns
CAS-to-CAS delay
tCCD
MIN
2
2
2
2
2
2
2
2
tCK
(avg)
Internal READ to PRECHARGE
command delay
tRTP
MIN
2
7.5
7.5
7.5
7.5
7.5
7.5
7.5
ns
RAS-to-CAS delay
tRCD
MIN
3
18
18
18
18
18
18
18
ns
Row precharge time (single bank)
tRPpb
MIN
3
18
18
18
18
18
18
18
ns
Row precharge time (all banks)
tRPab
4-bank
MIN
3
18
181818181818
ns
Row precharge time (all banks)
tRPab
8-bank
MIN
3
21
212121212121
ns
Row active time
tRAS
MIN
3
42
42
42
42
42
42
42
ns
MAX
70
707070707070
μs
WRITE recovery time
tWR
MIN
3
15
151515151515
ns
Internal WRITE-to-READ
command delay
tWTR
MIN
2
7.5
7.5
7.5
7.5
7.5
10
10
ns
Active bank a to active bank b
tRRD
MIN
2
10
10
10
10
10
10
10
ns
Four-bank activate window
tFAW
MIN
8
50
505050505060
ns
Minimum deep power-down time
tDPD
MIN
500
500
500
500
500
500
500
μs
Temperature Derating16
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
AC Timing
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
135
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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