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EDBA164B4PR-1DATF-R 数据表(PDF) 138 Page - Micron Technology

部件名 EDBA164B4PR-1DATF-R
功能描述  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

EDBA164B4PR-1DATF-R 数据表(HTML) 138 Page - Micron Technology

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tangent line to the actual signal from the AC level to the DC level is used for the derating
value (see Figure 85 (page 143)).
The hold (tIH) typical slew rate for a rising signal is defined as the slew rate between the
last crossing of VIL(DC)max and the first crossing of VREF(DC). The hold (tIH) typical slew
rate for a falling signal is defined as the slew rate between the last crossing of VIH(DC)min
and the first crossing of VREF(DC). If the actual signal is consistently later than the typical
slew rate line between the shaded DC-to-VREF(DC) region, use the typical slew rate for
the derating value (see Figure 84 (page 142)). If the actual signal is earlier than the typi-
cal slew rate line anywhere between the shaded DC-to-VREF(DC) region, the slew rate of a
tangent line to the actual signal from the DC level to VREF(DC) level is used for the derat-
ing value (see Figure 86 (page 144)).
For a valid transition, the input signal must remain above or below VIH/VIL(AC) for a
specified time, tVAC (see Table 96 (page 139)).
For slow slew rates the total setup time could be a negative value; that is, a valid input
signal will not have reached VIH/VIL(AC) at the time of the rising clock transition. A valid
input signal is still required to complete the transition and reach VIH/VIL(AC).
For slew rates between the values listed in Table 94, the derating values are obtained us-
ing linear interpolation. Typically, slew rate values are not subject to production testing.
They are verified by design and characterization.
Table 92: CA and CS_n Setup and Hold Base Values (>400 MHz, 1 V/ns Slew Rate)
Parameter
Data Rate
Reference
1066
933
800
667
533
466
tIS (base)
0
30
70
150
240
300
VIH/VIL(AC) = VREF(DC) ±220mV
tIH (base)
90
120
160
240
330
390
VIH/VIL(DC) = VREF(DC) ±130mV
Note:
1. AC/DC referenced for 1 V/ns CA and CS_n slew rate, and 2 V/ns differential CK_t/CK_c
slew rate.
Table 93: CA and CS_n Setup and Hold Base Values (<400 MHz, 1 V/ns Slew Rate)
Parameter
Data Rate
Reference
400
333
266
200
tIS (base)
300
440
600
850
VIH/VIL(AC) = VREF(DC) ±300mV
tIH (base)
400
540
700
950
VIH/VIL(DC) = VREF(DC) ±200mV
Note:
1. AC/DC referenced for 1 V/ns CA and CS_n slew rate, and 2 V/ns differential CK_t/CK_c
slew rate.
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
CA and CS_n Setup, Hold, and Derating
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
138
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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