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MPFS250T 数据表(PDF) 28 Page - Microchip Technology |
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MPFS250T 数据表(HTML) 28 Page - Microchip Technology |
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28 / 128 page ![]() Condition Unit Max (%) Typ Min (%) VDDI = 1.2 V Ω 20 40 –20 VDDI = 1.2 V Ω 20 48 –20 VDDI = 1.2 V Ω 20 60 –20 VDDI = 1.2 V Ω 20 80 –20 VDDI = 1.2 V Ω 20 120 –20 VDDI = 1.2 V Ω 20 240 –20 Note: Measured at 80% of VDDI. Table 22 • Single-Ended (Internal Parallel) Termination to VSS Condition Unit Max (%) Typ Min (%) VDDI = 1.8 V/1.5 V Ω 20 120 –20 VDDI = 1.8 V/1.5 V Ω 20 240 –20 VDDI = 1.2 V Ω 20 120 –20 VDDI = 1.2 V Ω 20 240 –20 Note: Measured at 50% of VDDI. 5.3.5 GPIO On-Die Termination The following table lists the on-die termination calibration accuracy specifications for the GPIO bank. Table 23 • On-Die Termination Calibration Accuracy Specifications for GPIO Bank Condition Unit Max (%) Typ Min (%) Description Parameter VICM < 0.8 V 6 Ω 20 100 –20 Internal differen- tial termination Differential ter- mination 1 0.6 V < VICM < 1. 65 V 6 Ω 40 100 –20 1.4 V < VICM 6 Ω 80 100 –20 VDDI = 1.8 V/1.5 V Ω 20 50 –40 Internal parallel thevenin termi- nation Single-ended thevenin termi- nation 2, 3 VDDI = 1.8 V Ω 20 75 –40 VDDI = 1.8 V Ω 20 150 –40 VDDI = 1.5 V Ω 20 20 –20 VDDI = 1.5 V Ω 20 30 –20 VDDI = 1.5 V Ω 20 40 –20 24 Microsemi Proprietary and Confidential. DS0147 Revision 1.0 DC Characteristics |
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